武田 彩希 (タケダ アヤキ)

TAKEDA Ayaki

写真a

所属

工学教育研究部 工学科応用物理工学プログラム担当

職名

准教授

外部リンク

学位 【 表示 / 非表示

  • 博士(理学) ( 2014年3月   総合研究大学院大学 )

  • 修士(教育学) ( 2010年3月   京都教育大学 )

研究分野 【 表示 / 非表示

  • 自然科学一般 / 素粒子、原子核、宇宙線、宇宙物理にする理論

  • ものづくり技術(機械・電気電子・化学工学) / 電子デバイス、電子機器

  • 自然科学一般 / 素粒子、原子核、宇宙線、宇宙物理にする実験

  • エネルギー / 量子ビーム科学

 

論文 【 表示 / 非表示

  • Development of on-chip pattern processing in event-driven SOI pixel detector for X-ray astronomy with background rejection purpose 査読あり

    Takeda A., Mori K., Nishioka Y., Hida T., Yukumoto M., Kanemaru Y., Yonemura S., Mieda K., Tsuru T.G., Tanaka T., Kurachi I., Arai Y.

    Journal of Instrumentation   15 ( 12 )   2020年12月

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    担当区分:筆頭著者   記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Instrumentation  

    This paper reports on the development of on-chip pattern processing in the event-driven silicon-on-insulator pixel detector for X-ray astronomy with background rejection purpose. X-ray charge-coupled device (CCD) detectors, well-established pixel detectors used in this field, has proven that classification of detected events considering their spatial pattern is effective for particle background rejection. Based on the current architecture of our device and from the CCD images obtained in space, we first established a design concept and algorithm of the pattern processor to be implemented. Then, we developed a new device, including a prototype pattern-processing circuit. Experiments using X-ray and beta-ray radioisotopes demonstrated that the pattern processor properly works as expected, and the particle background rejection is realized in an on-chip fashion. This function is useful, especially in a limited-resource system such as the CubeSat.

    DOI: 10.1088/1748-0221/15/12/P12025

    Scopus

  • Spectroscopic performance improvement of SOI pixel detector for X-ray astronomy by introducing Double-SOI structure 査読あり

    Takeda A., Mori K., Nishioka Y., Fukuda K., Yukumoto M., Hida T., Tsuru T.G., Tanaka T., Uchida H., Hayashi H., Harada S., Okuno T., Kayama K., Arai Y., Kurachi I., Kohmura T., Hagino K., Negishi K., Oono K., Yarita K., Matsumura H., Kawahito S., Kagawa K., Yasutomi K., Shrestha S., Nakanishi S., Kamehama H.

    Journal of Instrumentation   15 ( 11 )   2020年11月

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    担当区分:筆頭著者   記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Instrumentation  

    This paper reports the spectroscopic performance improvement of the silicon-oninsulator (SOI) pixel detector for X-ray astronomy, by introducing a double-SOI (D-SOI) structure. For applications inX-ray astronomical observatories, we have been developing a series of monolithic active pixel sensors, named as “XRPIXs,” based on SOI pixel technology. The D-SOI structure has an advantage that it can suppress a parasitic capacitance between the sensing node and the circuit layer, due to which the closed-loop gain cannot be increased in our conventional XRPIXs with a single-SOI (S-SOI) structure. Compared to the S-SOI XRPIX, the closed-loop gain is doubled in the D-SOI XRPIX. The readout noise is effectively lowered to 33% (16 e (rms)), and the energy resolution at 6.4 keV is improved by a factor of 1.7 (290 eV in FWHM). The suppression of the parasitic capacitance is also quantitatively evaluated based on the results of capacitance extraction simulation from the layout. This evaluation provides design guidelines for further reduction of the readout noise.

    DOI: 10.1088/1748-0221/15/11/P11001

    Scopus

  • Proton radiation hardness of x-ray SOI pixel sensors with pinned depleted diode structure

    Hayashida M., Hagino K., Kohmura T., Kitajima M., Yarita K., Oono K., Negishi K., Tsuru T.G., Tanaka T., Uchida H., Kayama K., Kodama R., Mori K., Takeda A., Nishioka Y., Hida T., Yukumoto M., Arai Y., Kurachi I., Kitamura H., Kawahito S., Yasutomi K.

    Journal of Astronomical Telescopes, Instruments, and Systems   7 ( 3 )   2021年7月

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Journal of Astronomical Telescopes, Instruments, and Systems  

    X-ray silicon-on-insulator (SOI) pixel sensors, "XRPIX,"are being developed for the next-generation x-ray astronomical satellite, "FORCE."The XRPIX is fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si complementary metal oxide semiconductor (CMOS) circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with x-ray signals at the timing of x-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor x-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at Heavy Ion Medical Accelerator in Chiba in the National Institute of Radiological Sciences. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 ± 3 %, yielding an energy resolution of 260.1 ± 5.6 eV at the full-width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.

    DOI: 10.1117/1.JATIS.7.3.036001

    Scopus

  • Low-energy X-ray performance of SOI pixel sensors for astronomy, “XRPIX” 査読あり

    Kodama R., Tsuru T.G., Tanaka T., Uchida H., Kayama K., Amano Y., Takeda A., Mori K., Nishioka Y., Yukumoto M., Hida T., Arai Y., Kurachi I., Kohmura T., Hagino K., Hayashida M., Kitajima M., Kawahito S., Yasutomi K., Kamehama H.

    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment   986   2021年1月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment  

    We have been developing a new type of X-ray pixel sensors, “XRPIX”, allowing us to perform imaging spectroscopy in the wide energy band of 1–20keV for the future Japanese X-ray satellite “FORCE”. The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the “Event-Driven readout mode”, in which only a hit event is read out by using hit information from a trigger output function equipped with each pixel. This paper reports on the low-energy X-ray performance of the “XRPIX6E” device with a Pinned Depleted Diode (PDD) structure. The PDD structure especially reduces the readout noise, and hence is expected to largely improve the quantum efficiencies for low-energy X-rays. While F-K X-rays at 0.68keV and Al-K X-rays at 1.5keV are successfully detected in the “Frame readout mode”, in which all pixels are read out serially without using the trigger output function, the device is able to detect Al-K X-rays, but not F-K X-rays in the Event-Driven readout mode. Non-uniformity is observed in the counts maps of Al-K X-rays in the Event-Driven readout mode, which is due to region-to-region variation of the pedestal voltages at the input to the comparator circuit. The lowest available threshold energy is 1.1keV for a small region in the device where the non-uniformity is minimized. The noise of the charge sensitive amplifier at the sense node and the noise related to the trigger output function are ∼18e− (rms) and ∼13e− (rms), respectively.

    DOI: 10.1016/j.nima.2020.164745

    Scopus

  • Development of the detector simulation framework for the Wideband Hybrid X-ray Imager onboard FORCE 査読あり

    Suzuki H., Tamba T., Odaka H., Bamba A., Hagino K., Takeda A., Mori K., Hida T., Yukumoto M., Nishioka Y., Tsuru T.G.

    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment   979   2020年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment  

    © 2020 Elsevier B.V. FORCE is a Japan–US space-based astronomy mission for an X-ray imaging spectroscopy in an energy range of 1–80 keV. The Wideband Hybrid X-ray Imager (WHXI), which is the main focal plane detector, will use a hybrid semiconductor imager stack composed of silicon and cadmium telluride (CdTe). The silicon imager will be a certain type of the silicon-on-insulator (SOI) pixel sensor, named the X-ray pixel (XRPIX) series. Since the sensor has a small pixel size (30–36 μm) and a thick sensitive region (300–500 μm), understanding the detector response is not trivial and is important in order to optimize the camera design and to evaluate the scientific capabilities. We have developed a framework to simulate observations of celestial sources with semiconductor sensors. Our simulation framework was tested and validated by comparing our simulation results to laboratory measurements using the XRPIX 6H sensor. The simulator well reproduced the measurement results with reasonable physical parameters of the sensor including an electric field structure, a Coulomb repulsion effect on the carrier diffusion, and arrangement of the degraded regions. This framework is also applicable to future XRPIX updates including the one which will be part of the WHXI, as well as various types of semiconductor sensors.

    DOI: 10.1016/j.nima.2020.164433

    Scopus

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MISC 【 表示 / 非表示

  • 軟X線から硬X線の広帯域を高感度で撮像分光する小型衛生計画FORCEの現状(11)

    森浩二, 武田彩希, 村上弘志, 寺田幸功, 久保田あや, 榎戸輝明, 馬場彩, 小高裕和, 谷津陽一, 小林翔悟, 幸村孝由, 萩野浩一, 内山泰伸, 北山哲, 高橋忠幸, 石田学, 渡辺伸, 山口弘悦, 大橋隆哉, 中嶋大, 中澤知洋, 古澤彰浩, 鶴剛, 上田佳宏, 田中孝明, 内田裕之, 松本浩典, 野田博文, 常深博, 伊藤真之, 信川正順, 信川久実子, 太田直美, 粟木久光, 寺島雄一, 深沢泰司, 水野恒史, 高橋弘充, 大野雅功, 赤松弘規, HORNSCHEMEIER A.E., 岡島崇, ZHANG W.W.

    日本天文学会年会講演予稿集   2021   2021年

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    掲載種別:速報,短報,研究ノート等(学術雑誌)  

    J-GLOBAL

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講演・口頭発表等 【 表示 / 非表示

  • 次世代宇宙X線観測へ向けたセンサ回路一体型イベント駆動 SOI 検出器の開発 招待あり

    武田 彩希

    「放射線科学とその応用第186委員会」第32回研究会  (東京大学 山上会館)  独立行政法人日本学術振興会「放射線科学とその応用第186委員会」

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    開催年月日: 2019年7月26日

    記述言語:日本語   会議種別:口頭発表(招待・特別)  

    開催地:東京大学 山上会館  

  • Improvement and Evaluation of Event-driven Performance with Double-SOI Pixel Detectors for X-ray Astronomy 国際会議

    Takeda A.

    International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2018)  (Academia Sinica, Taipei) 

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    開催年月日: 2018年12月10日 - 2018年12月14日

    記述言語:英語   会議種別:口頭発表(一般)  

    開催地:Academia Sinica, Taipei  

    We have been developing a monolithic active pixel sensor with the silicon-on-insulator (SOI) CMOS technology for use in future X-ray astronomical satellite missions. Our objective is to replace the X-ray Charge Coupled Device (CCD), which is the standard detector in the field, by offering high coincidence time resolution (∼ 50 ns), superior hit-position readout time (∼ 10 μs), and wide band- pass (0.5 – 40 keV) in addition to having comparable performances in imaging spectroscopy. We have been developing prototype detectors, called “XRPIX” series. XRPIX contains comparator circuit in each pixel to detect an X-ray photon injection; it offers intra-pixel hit trigger (timing) and two-dimensional hit-pattern (position) outputs. Therefore, XRPIX is capable of direct access to selected pixels to read out the signal amplitude. In our previous study, we evaluated its basic imaging spectroscopic performance and obtained the X-ray spectra by this system. Recently, we designed a prototype device named XRPIX6D, to which we introduced a Double-SOI structure, to improve an X-ray responsivity. The difference from the conventional SOI wafer is that the Si layer, called middle-silicon is added to the buried oxide layer. The Double-SOI structure reduces the parasitic capacitance between the sense-node and the CMOS circuit by fixing the potential of middle-Si layer, and suppresses crosstalk between them. This structure is also expected to increase in conversion gain due to reduction in the sense-node parasitic capacitance and increase in closed-loop gain due to reduction in the feedback parasitic capacitance. XRPIX6D has the chip output gain of 40.5 μV/e−, and the readout noise of 16 e−(rms), the energy resolution of 290 eV in full width at half maximum for 6.4 keV X-rays in all pixel readout mode. We successfully improved the spectroscopic perfor- mance also in the event-driven readout mode. Furthermore, we improved the event determine rate by introducing a hit-pattern processing circuit in XRPIX.

  • Estimation and imaging of recoil electron with event-driven SOI sensor and deep learning in Compton imaging system 国際会議

    Hou X., Takeda A.

    International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2018)  (Academia Sinica, Taipei) 

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    開催年月日: 2018年12月10日 - 2018年12月14日

    記述言語:英語   会議種別:口頭発表(一般)  

    開催地:Academia Sinica, Taipei  

    In conventional method of Compton imaging, only the information of gamma rays is used to estimate the location of radiation source. However, because of the information deficiency of recoil electrons occurred in Compton scattering process, signal-to-noise ratio (SNR) and angular resolution will be reduced. Recently, deep learning has become an increasingly important hot pot. With deep learning, the correct label of recoil electrons energy deposit image is made and divided into practice data for learning and test data for prediction. With the prediction results of direction vector and scatter plane deviation (SPD), the imaging of recoil electrons is carried out. Based on it, we explore a new approach for recoil electrons tracking using trigger-mode Silicon- On-Insulator (SOI) sensor with a pitch of 36μm which named XPRIX6c. The XRPIX series is one of the “SOIPIX” detector, which is an active pixel sensor based on SOI complementary metal-oxide- semiconductor (CMOS) pixel technology [1]. XPRIX6c consists of 48×48 pixels, and each pixel has a charge integration circuit and trigger circuit [2][3]. The ejected direction of a recoiled electron is detected on the SOI pixel detector. And then, using Geant4, 137Cs whose energy is 662keV was simulated to get the data of recoil electrons trajectories. In this simulation, the distance of source and detector was 5cm and 200 files of which each contained more than 700 Compton scattering information was used for deep learning. Through the combination, the ejected direction in three-dimension can be identified and the accuracy of imaging can be improved. We obtained the recoiled electron trajectories of 137Cs with trigger-mode SOI pixel detector and through deep learning, we did prediction to get more accurate imaging. We will show the results.

  • Measurement of Charge Cloud Size in X-ray SOI Pixel Detectors 国際会議

    Hagino K., Tanaka T., Tsuru. G. T., Takeda A., Arai Y.

    2018 IEEE Nuclear Science Symposium and Medical Imaging Conference  (International Convention Centre, Sydney, Australia) 

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    開催年月日: 2018年11月10日 - 2018年11月17日

    記述言語:英語   会議種別:ポスター発表  

    開催地:International Convention Centre, Sydney, Australia  

    We have been developing the X-ray SOI (Silicon-On-Insulator) pixel sensor named XRPIX for the future astrophysical satellites. XRPIX is a monolithic active pixel sensor composed of high-resistivity Si sensor, thin SiO2 insulator and CMOS pixel circuits by utilizing the SOI technology. Since XRPIX is capable of event-driven readout, it can achieve a high timing resolution better than ∼ 10 μs, which enables an extremely low background observation by adopting the anti-coincidence technique. For scientific purpose, in addition to the improvement of detector performance, accurate knowledge on detector response is also of great importance. Especially, the size of charge cloud produced by X-ray photons in X-ray pixel detectors is an essential physical parameter to understand the detector response. In this presentation, we report on the measurement of the size of charge cloud produced by X-ray photons in XRPIX. We carried out a beam scanning experiment of XRPIX using monochromatic X-ray beam at 5 keV collimated to 4 μmφ, and obtained the spatial distribution of single pixel events in subpixel scale. By analyzing the data, the charge cloud diameter of 5 keV X-ray was successfully estimated to be 9.45 ± 0.15 μm. By comparing this value with the detector response simulation, the estimated charge cloud size was well explained by the effect of photoelectron range, thermal diffusion, and Coulomb repulsion. Moreover, by analyzing the fraction of multi-pixel events for various energies, we found that the energy dependence of the charge cloud size was also consistent with the simulation.

  • Evaluation of the detection capability of the recoil electron tracks of 511-keV gamma rays with an advanced Compton camera using an SOI pixel sensor 国際会議

    Kagaya M., H. Katagiri H., Tojo N., Tsuru. G. T., Takeda A., Arai Y.

    2018 IEEE Nuclear Science Symposium and Medical Imaging Conference  (International Convention Centre, Sydney, Australia) 

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    開催年月日: 2018年11月10日 - 2018年11月17日

    記述言語:英語   会議種別:口頭発表(一般)  

    開催地:International Convention Centre, Sydney, Australia  

    Observation of 511-keV gamma rays is important for elucidating various high-energy phenomena in astrophysics. Compton-imaging techniques are suitable for visualizing sub-MeV gamma rays including 511 keV because it has a wider field of view and a significantly larger effective area than a gamma-ray detector using coded aperture masks. However, for a classical Compton camera, the number of false spots and background increases by the overlap of projected Compton cones. On the other hand, for an advanced Compton camera, the probability distribution of the location of a radiation source is estimated by back-projection as a smeared-arc shape by detecting recoil electron tracks. A high-energy resolution is an important characteristic for line-gamma-ray observation, as it enables identification of the energy of a gamma-ray peak and reduces the background. Here, we focus on a fine pixel-pitch semiconductor detector using silicon-on-insulator (SOI) technique. Such a Compton camera was developed in previous studies and could detect the recoil-electron tracks due to 660-1330 keV gamma rays, however, 511-keV gamma rays have not been investigated. In this study, we developed a prototype advanced Compton camera and evaluated its detection capability of 511-keV gamma rays. For a current prototype, we used an SOI pixel sensor (XRPIX2b) with 30μm cells developed by Kyoto University. We carried out the performance tests of XRPIX2b. The energy resolution is 0.8 keV at 13.9 keV. Moreover, we confirmed that the XRPIX2b detected 59.9 keV-gamma rays released from Am-241. The range of Compton-recoil electrons is about 40 μm when the incident angle of 511-keV gamma ray is about 30 degrees from the detector. The energy of the recoil electron is about 60 keV. For this reason, XRPIX2b may detect recoil-electron tracks with a scattering angle of >30 degrees. At this conference, we will report the result of the evaluation of detection capability of recoil electron tracks of 511 keV gamma rays.

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科研費(文科省・学振・厚労省)獲得実績 【 表示 / 非表示

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    研究課題/領域番号:19K14742  2019年04月 - 2022年03月

    日本学術振興会  科学研究費補助金  若手研究

    武田 彩希

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    担当区分:研究代表者 

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    研究課題/領域番号:15K17648  2015年04月 - 2018年03月

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    研究課題/領域番号:21H04493  2021年04月 - 2025年03月

    科学研究費補助金  基盤研究(A)

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    科学研究費補助金  基盤研究(A)

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