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Affiliation |
Engineering educational research section Semiconductor Science and Applied Physics Program |
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Title |
Associate Professor |
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Related SDGs |
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ASAMI Meita
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Research Areas 【 display / non-display 】
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials / Photovoltaics
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Energy Engineering / Earth resource engineering, Energy sciences / 太陽光発電 / 太陽熱給湯
Papers 【 display / non-display 】
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Oshimo T., Motomura Y., Tabata K., Yamada T., Aonuki S., Ochiai N., Suzuki Y., Kashiwakura K., Toriumi Y., Takahashi M., Suzuki J., Aoyama R., Uchida S., Akahane K., Nishioka K., Asami M., Arai M.
Physica Status Solidi A Applications and Materials Science 223 ( 2 ) 2026.1
Language：English Publishing type：Research paper (scientific journal) Publisher：Physica Status Solidi A Applications and Materials Science
Herein, InGaAsP photovoltaic devices are fabricated for 1.06 μm band optical wireless power transmission. The fabrication process incorporates multi-junctions through the introduction of tunnel junctions, an increase in the thickness of the surface electrode, and an outer circular electrode. The epitaxial layers are grown via the metal–organic vapor-phase epitaxy method. Multi-junctions are realized via the utilization of Type II tunnel junctions. Results show that an increase in the thickness of the photoresist results in the fabrication of a thicker electrode. The implementation of an outer circular electrode results in a maximum power conversion efficiency that exceeds 44% at a laser irradiation intensity of 1.5 W cm<sup>−2</sup>.
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Taketa Nana, Asami Meita, Sugiyama Masakazu, Harada Tomoki, Ikari Tetsuo, Fukuyama Atsuhiko
54 53 - 57 2025.10
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Faculty of Engineering, University of Miyazaki
DOI： 10.34481/0002001942
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Oshimo T., Motomura Y., Tabata K., Yamada T., Aonuki S., Ochiai N., Suzuki Y., Kashiwakura K., Toriumi Y., Takahashi M., Suzuki J., Aoyama R., Uchida S., Akahane K., Nishioka K., Asami M., Arai M.
Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers 64 ( 10 ) 2025.10
Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers
We investigated the electrode thickness dependence of InGaAsP photovoltaic devices for 1.06 μm range optical wireless power transmission. Epitaxial layers were grown using metal-organic vapor-phase epitaxy. Thick-front electrodes were formed using electrolytic plating and the liftoff technique. We investigated the current–voltage characteristics under 1064 nm laser irradiation and confirmed that the thick electrode is effective in decreasing the series resistance and improving the fill factor, especially under high-intensity laser irradiation. The maximum power conversion efficiency exceeded 35% at 3.3 W cm<sup>−2</sup> laser power density.
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Ma D., Sodabanlu H., Asami M., Watanabe K., Sugiyama M., Nakano Y.
Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers 64 ( 10 ) 2025.10
Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers
We investigated the impact of junction position (front and rear) and type (homojunction and heterojunction) on the performance of InGaAs solar cells, aiming to determine the optimal design of an InGaAs subcell for high-efficiency multijunction solar cells. The key findings include the following: a front-junction configuration enables efficient carrier collection, resulting in a high J<inf>SC</inf>; and heterojunctions and a rear-junction configuration contribute to suppressing Shockley–Read–Hall recombination, resulting in a high V<inf>OC</inf>. Further, the base thickness of InGaAs solar cells was optimized to enhance J<inf>SC</inf>. Subsequently, we fabricated two InGaAs/InGaAsP dual-junction (2J) solar cells comprising an InGaAs bottom cell with either a front heterojunction (FHJ) or rear heterojunction (RHJ) structure and compared their performances. The 2J-FHJ device demonstrated a superior efficiency (7.39%) compared to the 2J-RHJ (7.37%). The theoretical calculation results reveal that the 2J-FHJ structure holds great potential for achieving a higher efficiency, approximately 42.6%, in four-junction solar cell applications under nonconcentrated illumination.
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Effects of Ohmic Contact Formation between GaN Photocatalyst and Pt Cocatalyst Reviewed
OCHIAI Takaya, ASAMI Meita, VEIGA Lionel, YAMAGUCHI Shingi, SUGIYAMA Masakazu, MINEGISHI Tsutomu
Electrochemistry 93 ( 9 ) 094015 - 094015 2025.9
Language：English Publishing type：Research paper (scientific journal) Publisher：The Electrochemical Society of Japan
A model photocatalyst composed of n-type GaN thin film as a photocatalyst body with a comb shaped electrode composed of Pt layer or Pt/Ti bilayer on the surface was successfully prepared, and photocatalytic and electric properties are investigated. Current-voltage (<i>I</i>-<i>V</i>) curve measurements revealed the formation of Schottky contact between Pt comb and GaN, and ohmic contact between Pt/Ti comb and GaN. In the reaction tests, the GaN model photocatalyst with a Pt/Ti comb showed about three times increased hydrogen evolution rates over the photocatalyst with a solely Pt comb. Under irradiation, about 0.2 V photovoltage at Pt-GaN interface was observed, which prevents electron transfer from the GaN photocatalyst body to Pt cocatalyst, while the photovoltage was eliminated by the introduction of a Ti layer between the Pt and GaN. In-situ photoluminescence (PL) measurement in oxygen ambient confirmed smooth transfer of photoexcited electrons in GaN to Pt/Ti comb, and the degree of quenching indicates efficient charge separation at the working potential. Furthermore, the filling of mid-gap states by electrons was also observed.
MISC 【 display / non-display 】
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Messages from Student Affiliate Alumni Reviewed
ASAMI Meita, OTEKI Yusuke, SASAKI Tomoya, YOKOTA Riko
Advanced Education Outreach 2024 20 - 23 2025.6
Language：Japanese Publishing type：Rapid communication, short report, research note, etc. (scientific journal) Publisher：Advance Education Outreach lab
Four graduates from the first cohort of Student Affiliates (established in 2021) reflect on their activities during their time with AEO and after graduation.
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Excitation Light Intensity Dependence of Photoluminescence Peak of InGaAs/GaAsP Wire-on-Well Solar Cells Reviewed
Taketa Nana, Komaba Shintaro, Asami Meita, Sugiyama Masakazu, Ikari Tetsuo, Fukuyama Atsuhiko
Proceedings of the Annual Meeting of the Japan Photovoltaic Society 3 80 - 80 2023.6
Language：Japanese Publishing type：Rapid communication, short report, research note, etc. (scientific journal) Publisher：The Japan Photovoltaic Society
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Investigations on Absorber Type and Junction Position of GaAs Solar Cells Reviewed
Gan Li, Hassanet Sodabanlu, Meita Asami, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano
Conference Record of the IEEE Photovoltaic Specialists Conference 2023
Publishing type：Rapid communication, short report, research note, etc. (scientific journal)
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Numerical Investigation on Non-Radiative Recombination in InGaAs Front and Rear Hetero-Junction Solar Cell Reviewed
Depu Ma, Hassanet Sodabanlu, Gan Li, Meita Asami, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano
Conference Record of the IEEE Photovoltaic Specialists Conference 2023
Publishing type：Rapid communication, short report, research note, etc. (scientific journal)
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Radiation damage for non-radiative recombination rate of a heterojunction solar cell Reviewed
Nakamura T., Imaizumi M., Asami M., Yanwachirakul W., Sugiyama M., Akiyama H., Okada Y., Sato S.-I., Ohshima T.
Proceedings of the Annual Meeting of the Japan Photovoltaic Society 1 98 - 98 2021.10
Language：Japanese Publishing type：Rapid communication, short report, research note, etc. (scientific journal) Publisher：The Japan Photovoltaic Society
Presentations 【 display / non-display 】
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太陽電池における電圧損失の要因は何か？ Invited
浅見 明太
JSAP若手チャプター 太陽光エネルギー変換機能材料・デバイス開発研究会 2026.3.13
Event date： 2026.3.13 - 2026.3.14
Language：Japanese Presentation type：Oral presentation (invited, special)
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ZEB実現に向けた蓄電池併設屋上・壁面太陽光発電システムの技術経済性最適化
原井 小太郎, 前 匡鴻, 浅見 明太, 渡辺 健太郎, 杉山 正和
令和8年 電気学会全国大会 2026.3.13
Event date： 2026.3.12 - 2026.3.14
Language：Japanese Presentation type：Oral presentation (general)
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Optimization of Electrode Pattern on InGaAsP Photovoltaic Devices for Laser Power Converter
Kotona Tabata, Takaya Oshimo, Takeru Yamada, Meita Asami, Masakazu Arai
The 10th Asian Applied Physics Conference 2025.12.6
Event date： 2025.12.6 - 2025.12.7
Language：English Presentation type：Oral presentation (general)
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PL測定によるInGaAs/GaAsP圧縮歪超格子におけるキャリア再結合過程の解析
中島魁耶, 浅見明太, 杉山正和, 碇哲雄, 福山敦彦
2025年度応用物理学会九州支部学術講演会 2025.12.6
Event date： 2025.12.6 - 2025.12.7
Language：Japanese Presentation type：Oral presentation (general)
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Effects of Contact Layer Metals on BiVO4 Photoelectrodes Prepared by Particle Transfer Method
Junji Miyamura, Veiga Lionel Sebastian, Yoshitomo Seki, Meita Asami, Tsutomu Minegishi, Masakazu Sugiyama
Sol-X workshop 2025 2025.12
Event date： 2025.12.2
Language：English Presentation type：Poster presentation
Awards 【 display / non-display 】
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Student Award
2020.9 European Photovoltaic Solar Energy Conference and Exhibition Luminescent Characteristics of Wire-on-Well Nanostructure Solar Cells
Meita Asami, Riko Yokota, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama
Award type：International academic award (Japan or overseas)
Grant-in-Aid for Scientific Research 【 display / non-display 】
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半導体デバイス微細加工技術と評価手法による粒子状光触媒の設計指針の構築と高効率化
Grant number：24K17641 2024.04 - 2026.03
（科研）東京大学 科学研究費基金 若手研究
Authorship：Principal investigator
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Development of All-Weather III-V Compound Quantum Structure Solar Cells for Mobile Applications
Grant number：23K19113 2023.08 - 2025.03
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Research Activity Start-up
Authorship：Principal investigator
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Investigation of Carrier Transport Process in Undulated Superlattice and Development of High Carrier Density Solar Cells for Hydrogen Production
Grant number：22KJ0955 2023.03 - 2024.03
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for JSPS Fellows
Authorship：Principal investigator