Papers - ARAI Masakazu
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Maeda K., Fujisawa T., Arai M.
Journal of Materials Science: Materials in Electronics 36 ( 2 ) 2025.1
Publishing type：Research paper (scientific journal) Publisher：Journal of Materials Science: Materials in Electronics
Lattice-matched InAs/GaAs0.08Sb0.92 superlattices were grown on InAs substrates via metalorganic vapor-phase epitaxy, and the excitation intensity dependence of photoluminescence (PL) was measured from 20 to 300 K. The observed spectra were compared with the calculated spontaneous emission transitions. At 20 K, the changes in the calculated and measured spectral shapes with the carrier density in the wells closely concur. The blue shift of the emission peak, as the excitation intensity increased, was due to emission from a higher-order band. We determined the specific wavelengths at which the luminescence intensity increased rapidly at certain excitation intensities. These results broaden the spectral range. At 300 K, the PL spectrum was obtained only under strong excitation. Furthermore, higher-order transitions were also dominant in this case.
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GaAs基板上メタモルフィックInGaAs量子井戸レーザーの高温動作 Reviewed
荒井昌和
レーザー研究 52 ( 5 ) 253 2024.5
Authorship：Lead author Language：Japanese Publishing type：Research paper (scientific journal)
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GaAsSb/InGaAs tunnel FETs using thick SiO<inf>2</inf> mask for regrowth Reviewed
Fan J., Xu R., Arai M., Miyamoto Y.
Japanese Journal of Applied Physics 63 ( 3 ) 03SP75 2024.3
Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics
The regrowth conditions for lateral tunnel FETs featuring heterojunctions involve a tradeoff between selective growth and heavy doping. This study mitigated the connection between single crystals on the InP layer and polycrystals on the SiO2 mask by significantly increasing the thickness of the SiO2 mask to surpass that of the growing GaAsSb layer. We successfully fabricated p-GaAsSb/i-InGaAs tunnel FETs using a thick SiO2 mask, wherein the carrier concentration of the p-GaAsSb source was 5 × 1019 cm−3, and the growth temperature was maintained at 500 °C. The observed current-voltage (I-V) characteristics exhibited an on/off ratio of 5 × 104 and demonstrated ambipolar current behavior, confirming the presence of a p-type source. However, the observed subthreshold swing (SS) was limited to 120 mV dec−1. In comparison with the I-V characteristics of the planar transistor, degradation of SS can be explained by interface state, and the factor that characterizes the change of the drain current with the surface potential d Ψ s / d ( log 10 I D ) is estimated as 52 mV dec−1
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Hombu K., Hikita K., Fujisawa T., Maeda K., Arai M.
Physica Status Solidi (A) Applications and Materials Science 2024.2
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Physica Status Solidi (A) Applications and Materials Science
Midinfrared photonic devices are used as lasers and photodetectors in optical gas sensors and fiber-optic communications. Herein, the pair number dependence and strain compensation dependence of the InAsSb/InAsP superlattice structure to increase luminescence intensity and reduce crystal defects is investigated. InAs substrates are used to demonstrate various effects of strain compensation, including its role in increasing luminescence intensity and improving the surface flatness. Furthermore, the photoluminescence spectra of a grown superlattice between the InAs substrate and GaAs substrate with two-temperature-step growth are shown.
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Surface morphology improvement by diethylzinc doping on metamorphic InAs on GaAs using MOVPE Reviewed
Arai M., Nakagawa S., Hombu K., Hirata Y., Maeda K.
Journal of Crystal Growth 617 127274 2023.9
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Journal of Crystal Growth
We investigate the effect of diethylzinc doping on surface roughness during InAs growth on a GaAs substrate using metal-organic vapor phase epitaxy. Surface roughness was measured using atomic force microscopy and scanning electron microscopy. The surface flatness was considerably improved following the introduction of diethylzinc. Furthermore, we evaluate the Raman scattering and X-ray diffraction to investigate the crystallinity. The results confirm that diethylzinc doping effectively improves surface roughness.
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Crude Protein Content Estimation of Rhodes Grass Using Vegetation Indices Calculated by the Spectral Reflectance Reviewed
Arai Masakazu, Nakamura Keishiro, Ishigaki Genki
Japanese Journal of Grassland Science 69 ( 1 ) 23 - 26 2023.4
Authorship：Lead author Language：Japanese Publishing type：Research paper (scientific journal) Publisher：Japanese Society of Grassland Science
DOI： 10.14941/grass.69.23
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Electrode Shape Dependence of InGaAsP Photovoltaic Characteristics under Laser Irradiation for Optical Wireless and Fiber Power Transmission Reviewed
Masakazu ARAI, Akira KUSHIYAMA, Yuga MOTOMURA, and Kensuke NISHIOKA
The Review of Laser Engineering 51 ( 3 ) 171 - 175 2023.3
Authorship：Lead author, Last author Language：English Publishing type：Research paper (scientific journal)
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Arai Masakazu, Ikari Tetsuo, Fukuyama Atsuhiko, Sakoda Riku, Yatabe Tatsuhiko
Memoirs of Faculty of Engineering, University of Miyazaki 51 63 - 67 2022.11
Language：Japanese Publishing type：Research paper (scientific journal)
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Maeda Koji, Arai Masakazu, Ohama Tomohito, Iwakiri Yuto, Fujisawa Takeshi
Memoirs of Faculty of Engineering, University of Miyazaki 51 35 - 39 2022.11
Language：Japanese Publishing type：Research paper (scientific journal)
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Wide Wavelength Range Emission from InAs/GaSb Type-II Superlattice Grown by MOVPE
Arai M., Iwakiri Y., Fujisawa T., Maeda K.
Conference Digest - IEEE International Semiconductor Laser Conference 2022-October 2022
Language：Japanese Publishing type：Research paper (international conference proceedings) Publisher：Conference Digest - IEEE International Semiconductor Laser Conference
We investigated the emission wavelength shift of type-II InAs/ GaSb superlattice on InAs substrate grown by MOVPE. With increasing the injection carrier density, very wide wavelength range emission over 2000 nm was observed. Calculated spectrum using k p perturbation method show the same tendency.
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LiDARとドローンを用いた牧草の収量推定 Reviewed
荒井昌和，庄中原，中村渓士郎，石垣元気，小川将克
レーザー研究 第49巻 ( 第10号 ) 2021.10
Language：Japanese Publishing type：Research paper (scientific journal)
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Ohishi Yuki, Imamura Yuki, Arai Masakazu, Maeda Koji, Oishi Yuki
Memoirs of Faculty of Engineering, University of Miyazaki 50 75 - 78 2021.9
Language：Japanese Publishing type：Research paper (scientific journal)
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Zn Doping Effect on Surface Morphology of Metamorphic InAs on GaAs Grown by MOVPE
Nakagawa S., Imamura Y., Hirata Y., Maeda K., Arai M.
26th Microoptics Conference, MOC 2021 2021
Language：Japanese Publishing type：Research paper (international conference proceedings) Publisher：26th Microoptics Conference, MOC 2021
We investigate the effect of Zn doping on surface roughness during InAs growth on GaAs substrate by metal organic vapor phase epitaxy (MOVPE). The surface roughness was measured by atomic force microscope (AFM) and scanning electron microscope (SEM). We confirmed the Zn doping was effective to improve the surface roughness.
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Sakakura M., Kita N., Ishigaki G., Arai M.
26th Microoptics Conference, MOC 2021 2021
Language：Japanese Publishing type：Research paper (international conference proceedings) Publisher：26th Microoptics Conference, MOC 2021
We investigated the correlation among the crude protein content of grass, the vegetation index and fluorescence intensity for non-destructive nutrient estimation in farm land. Vegetation index image was measured through optical band pass filter under sunlight. Fluorescence was measured under blue LED irradiation. We confirmed high correlation to crude protein content.
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Preface to Special Issue on Laser Applications to Agriculture and Agricultural Products Reviewed
The Review of Laser Engineering 49 ( 10 ) 548 2021
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Laser Society of Japan
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Aso Taiki, Ohishi Yuki, Imamura Yuki, Arai Masakazu, Maeda Koji
Memoirs of Faculty of Engineering, University of Miyazaki 49 69 - 72 2020.9
Language：Japanese Publishing type：Research paper (scientific journal)
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Tamura Hiroki, Morita Chihiro, Bonkobara Yasuhiro, Arai Masakazu, Sugamoto Kazuhiro, Sakamoto Makoto, Ishizu Takahiro, Morita Chihiro
Memoirs of Faculty of Engineering, University of Miyazaki 49 17 - 22 2020.9
Language：Japanese Publishing type：Research paper (scientific journal)
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Excitation Intensity Dependence of Photoluminesence on InAs/GaSb Superlattice with Constant Ratio of Layer Thickness
2020.2
Language：Japanese Publishing type：Research paper (bulletin of university, research institution)
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Temperature Dependence of Mid-infrared Photoluminescence for InAs/GaSb Superlattice with Varying GaSb Layer Thickness
2020.2
Language：Japanese Publishing type：Research paper (bulletin of university, research institution)
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Microscopic gain analysis of modulation-doped GeSn/SiGeSn quantum wells: epitaxial design toward high-temperature lasing Reviewed
T. Fujisawa, M. Arai, and K. Saitoh
Optics Express 27 ( 3 ) 2457 2019.4
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1364/OE.27.002457