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Engineering educational research section Semiconductor Science and Applied Physics Program |
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ARAI Masakazu
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Research Areas 【 display / non-display 】
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
Papers 【 display / non-display 】
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Maeda K., Fujisawa T., Arai M.
Journal of Materials Science: Materials in Electronics 36 ( 2 ) 2025.1
Publishing type：Research paper (scientific journal) Publisher：Journal of Materials Science: Materials in Electronics
Lattice-matched InAs/GaAs0.08Sb0.92 superlattices were grown on InAs substrates via metalorganic vapor-phase epitaxy, and the excitation intensity dependence of photoluminescence (PL) was measured from 20 to 300 K. The observed spectra were compared with the calculated spontaneous emission transitions. At 20 K, the changes in the calculated and measured spectral shapes with the carrier density in the wells closely concur. The blue shift of the emission peak, as the excitation intensity increased, was due to emission from a higher-order band. We determined the specific wavelengths at which the luminescence intensity increased rapidly at certain excitation intensities. These results broaden the spectral range. At 300 K, the PL spectrum was obtained only under strong excitation. Furthermore, higher-order transitions were also dominant in this case.
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GaAs基板上メタモルフィックInGaAs量子井戸レーザーの高温動作 Reviewed
荒井昌和
レーザー研究 52 ( 5 ) 253 2024.5
Authorship：Lead author Language：Japanese Publishing type：Research paper (scientific journal)
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GaAsSb/InGaAs tunnel FETs using thick SiO<inf>2</inf> mask for regrowth Reviewed
Fan J., Xu R., Arai M., Miyamoto Y.
Japanese Journal of Applied Physics 63 ( 3 ) 03SP75 2024.3
Language：English Publishing type：Research paper (scientific journal) Publisher：Japanese Journal of Applied Physics
The regrowth conditions for lateral tunnel FETs featuring heterojunctions involve a tradeoff between selective growth and heavy doping. This study mitigated the connection between single crystals on the InP layer and polycrystals on the SiO2 mask by significantly increasing the thickness of the SiO2 mask to surpass that of the growing GaAsSb layer. We successfully fabricated p-GaAsSb/i-InGaAs tunnel FETs using a thick SiO2 mask, wherein the carrier concentration of the p-GaAsSb source was 5 × 1019 cm−3, and the growth temperature was maintained at 500 °C. The observed current-voltage (I-V) characteristics exhibited an on/off ratio of 5 × 104 and demonstrated ambipolar current behavior, confirming the presence of a p-type source. However, the observed subthreshold swing (SS) was limited to 120 mV dec−1. In comparison with the I-V characteristics of the planar transistor, degradation of SS can be explained by interface state, and the factor that characterizes the change of the drain current with the surface potential d Ψ s / d ( log 10 I D ) is estimated as 52 mV dec−1
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Hombu K., Hikita K., Fujisawa T., Maeda K., Arai M.
Physica Status Solidi (A) Applications and Materials Science 2024.2
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Physica Status Solidi (A) Applications and Materials Science
Midinfrared photonic devices are used as lasers and photodetectors in optical gas sensors and fiber-optic communications. Herein, the pair number dependence and strain compensation dependence of the InAsSb/InAsP superlattice structure to increase luminescence intensity and reduce crystal defects is investigated. InAs substrates are used to demonstrate various effects of strain compensation, including its role in increasing luminescence intensity and improving the surface flatness. Furthermore, the photoluminescence spectra of a grown superlattice between the InAs substrate and GaAs substrate with two-temperature-step growth are shown.
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Surface morphology improvement by diethylzinc doping on metamorphic InAs on GaAs using MOVPE Reviewed
Arai M., Nakagawa S., Hombu K., Hirata Y., Maeda K.
Journal of Crystal Growth 617 127274 2023.9
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Journal of Crystal Growth
We investigate the effect of diethylzinc doping on surface roughness during InAs growth on a GaAs substrate using metal-organic vapor phase epitaxy. Surface roughness was measured using atomic force microscopy and scanning electron microscopy. The surface flatness was considerably improved following the introduction of diethylzinc. Furthermore, we evaluate the Raman scattering and X-ray diffraction to investigate the crystallinity. The results confirm that diethylzinc doping effectively improves surface roughness.
MISC 【 display / non-display 】
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Miyake H., Sugiyama M., Miyamoto Y., Arai M., Kumakura K., Nitta S., Arita M., Katayama R., Irisawa T., Higashiwaki M., Tomioka K.
Journal of Crystal Growth 531 2020.2
Language：Japanese Publishing type：Rapid communication, short report, research note, etc. (scientific journal) Publisher：Journal of Crystal Growth
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Design and fabrication of double-cavity tunable filter using micromachined structure
Janto W., Amano T., Koyama F., Matsutani A., Kondo T., Arai M.
Japanese Journal of Applied Physics, Part 2: Letters 42 ( 7 B ) 2003.7
Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (bulletin of university, research institution) Publisher：Japanese Journal of Applied Physics, Part 2: Letters
We propose a micromachined tunable optical filter with a double-cavity structure, which exhibits a sharper and flatter filter response than a conventional single-cavity tiller, resulting in lower interchannel crosstalk and lower insertion loss. The possibility of using widely tunable tillers in 200-GHz-spacing wavelcngth-division-multiplexing (WDM) systems is presented. In addition, a lower tuning voltage can be achieved with thinner movable cantilevers. We have fabricated a double-cavity cavity filter with 7.5-pair top, 23.5-pair middle and 3.5-pair bottom GaAs/GaAlAs multilayer mirrors. The filter provides a better shape factor of reflection spectra of 0.41 than a single-cavity filter.
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Effect of annealing on highly strained GaInAs/GaAs quantum wells
Kondo T., Arai M., Azuchi M., Uchida T., Miyamoto T., Koyama F.
Japanese Journal of Applied Physics, Part 2: Letters 41 ( 6 A ) 2002.6
Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (bulletin of university, research institution) Publisher：Japanese Journal of Applied Physics, Part 2: Letters
We determine the effect of annealing on highly strained GaInAs/GaAs quantum wells (QWs) grown on a (100) n-type GaAs substrate by low-pressure metal-organic vapor phase epitaxy. Highly strained QWs suffer from degradation caused by high-temperature thermal annealing due to its high strain and it is indicated that the overgrowth temperature should be decreased. The comparison of the annealing effects with and without a GaInAs strained buffer layer (SBL) inserted below QWs was carried out. The SBL is effective in maintaining the good crystal quality of highly strained QWs after the overgrowth.
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Makino S., Miyamoto T., Kageyama T., Ikenaga Y., Arai M., Koyama F., Iga K.
Japanese Journal of Applied Physics, Part 2: Letters 40 ( 11 B ) 2001.11
Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (bulletin of university, research institution) Publisher：Japanese Journal of Applied Physics, Part 2: Letters
The thermal annealing process in effective to improve the optical quality of GaInNAs/GaAs quantum wells (QWs). However, a blue shift of the emission peak wavelength occurs during the annealing and it is strongly related to the annealing condition and the composition of GaInNAs/GaAs QWs. In this study, we investigated the dependences of both the annealing condition and the composition on the lasing characteristics of 1.3 μm GaInNAs/GaAs QW lasers.
Presentations 【 display / non-display 】
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Fabrication of 1.3-µm Band InGaAs/GaAsSb/InGaAs Type-II Laser Grown by Metal Organic Vapor Phase Epitaxy
2025.3
Event date： 2025.3.14 - 2025.3.17
Language：Japanese Presentation type：Oral presentation (general)
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Emission Changes in InAs/GaAsSb Superlattices Fabricated by Metal-Organic Vapor Phase Epitaxy with As Composition
2025.3
Event date： 2025.3.14 - 2025.3.17
Language：Japanese Presentation type：Oral presentation (general)
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Broad Band Photoluminescence from InGaAs/GaAsSb Type-II Quantum Well and Application to Super Luminescent Diode
2025.3
Event date： 2025.3.14 - 2025.3.17
Language：Japanese Presentation type：Oral presentation (general)
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CirDレーザ実現に向けたInAs量子ドット埋め込み領域を 共振器内に限定したコア層の作製
林楓真, 武藤広高, 加藤諒, 左如氷, 葉漢嶠, 梶井博武, 森藤正人, 八木哲哉, 丸田章博,荒井昌和 近藤正彦
Photonic Device Workshop 2024 2024.12
Event date： 2024.12.12 - 2024.12.13
Language：Japanese Presentation type：Oral presentation (general)
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ハイパースペクトルカメラを用いたマンゴー軸腐病の識別
牧ノ瀬開人、吉岡ひかり、大久保敦広、岩切優空、荒井昌和
近赤外フォーラム 2024.11
Event date： 2024.11.13 - 2024.11.15
Language：Japanese Presentation type：Oral presentation (general)
Awards 【 display / non-display 】
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最優秀賞
2023.3 高等教育コンソーシアム宮崎 ハイパースペクトルカメラを用いた農産物の非破壊検査技術の開発
吉岡ひかり、下田平 昂大、荒井昌和
Award type：Award from Japanese society, conference, symposium, etc.
Grant-in-Aid for Scientific Research 【 display / non-display 】
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格子緩和層とType-II型ヘテロ材料を用いた半導体レーザによる高温動作限界の打破
Grant number：24K07610 2024.04 - 2027.03
独立行政法人日本学術振興会 科学研究費基金 基盤研究(C)
Authorship：Principal investigator
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有機金属気相成長法によって作製した新規広帯域、中赤外発行する量子構造の開発
Grant number：22K04245 2022.04 - 2025.03
独立行政法人日本学術振興会 科学研究費基金 基盤研究(C)
Authorship：Coinvestigator(s)
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化合物半導体横方向ヘテロ接合の創成とその電子デバイスへの応用
Grant number：21H01384 2021 - 2024.03
独立行政法人日本学術振興会 科学研究費補助金 基盤研究(B)
Authorship：Coinvestigator(s)
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光センシング用半導体素子の適用波長域を拡大させる新規材料と転位制御の研究
Grant number：16K06305 2016.04 - 2019.03
科学研究費補助金 基盤研究(C)
Authorship：Principal investigator
医療応用や環境ガスセンシング用の広帯域な半導体光源の実現のため、様々なバンドギャップ波長をもつ材料を、基板の格子定数の制限を超えて集積するための結晶成長技術を開発する。
Available Technology 【 display / non-display 】
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光センシングの農業への応用
III-V族化合物半導体結晶膜の作製
光ファイバ通信や光無線給電用デバイスの作製Home Page： 荒井研究室
Related fields where technical consultation is available：・光を用いた農業センシング
・化合物半導体の新規材料，構造開発
・光無線給電