ARAI Masakazu

写真a

Affiliation

Engineering educational research section Applied Physics and Engineering Program

Title

Associate Professor

External Link

Degree 【 display / non-display

  • 博士(工学) ( 2003.3   東京工業大学 )

Research Areas 【 display / non-display

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

 

Papers 【 display / non-display

  • Surface Morphology Improvement by Diethylzinc Doping on Metamorphic InAs on GaAs Using MOVPE Reviewed

    Masakazu Arai, Shota Nakagawa, Koki Hombu, Yasushi Hirata, Koji Maeda

    Journal of Crystal Growth   2023.5

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1016/j.jcrysgro.2023.127274

  • Crude Protein Content Estimation of Rhodes Grass Using Vegetation Indices Calculated by the Spectral Reflectance Reviewed

    Masakazu Arai, Keishiro Nakamura, Genki Ishigaki

    69 ( 1 )   2023.4

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)  

  • Electrode Shape Dependence of InGaAsP Photovoltaic Characteristics under Laser Irradiation for Optical Wireless and Fiber Power Transmission Reviewed

    Masakazu ARAI, Akira KUSHIYAMA, Yuga MOTOMURA, and Kensuke NISHIOKA

    The Review of Laser Engineering   51 ( 3 )   171 - 175   2023.3

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    Authorship:Lead author, Last author   Language:English   Publishing type:Research paper (scientific journal)  

  • Wide Wavelength Range Emission from InAs/GaSb Type-II Superlattice Grown by MOVPE

    Arai M., Iwakiri Y., Fujisawa T., Maeda K.

    Conference Digest - IEEE International Semiconductor Laser Conference   2022-October   2022

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    Language:Japanese   Publishing type:Research paper (international conference proceedings)   Publisher:Conference Digest - IEEE International Semiconductor Laser Conference  

    We investigated the emission wavelength shift of type-II InAs/ GaSb superlattice on InAs substrate grown by MOVPE. With increasing the injection carrier density, very wide wavelength range emission over 2000 nm was observed. Calculated spectrum using k p perturbation method show the same tendency.

    DOI: 10.23919/ISLC52947.2022.9943409

    Scopus

  • LiDARとドローンを用いた牧草の収量推定 Reviewed

    荒井昌和,庄中原,中村渓士郎,石垣元気,小川将克

    レーザー研究   第49巻 ( 第10号 )   2021.10

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

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MISC 【 display / non-display

  • Preface

    Miyake H., Sugiyama M., Miyamoto Y., Arai M., Kumakura K., Nitta S., Arita M., Katayama R., Irisawa T., Higashiwaki M., Tomioka K.

    Journal of Crystal Growth   531   2020.2

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    Language:Japanese   Publishing type:Rapid communication, short report, research note, etc. (scientific journal)   Publisher:Journal of Crystal Growth  

    DOI: 10.1016/j.jcrysgro.2019.125337

    Scopus

  • Design and fabrication of double-cavity tunable filter using micromachined structure

    Janto W., Amano T., Koyama F., Matsutani A., Kondo T., Arai M.

    Japanese Journal of Applied Physics, Part 2: Letters   42 ( 7 B )   2003.7

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (bulletin of university, research institution)   Publisher:Japanese Journal of Applied Physics, Part 2: Letters  

    We propose a micromachined tunable optical filter with a double-cavity structure, which exhibits a sharper and flatter filter response than a conventional single-cavity tiller, resulting in lower interchannel crosstalk and lower insertion loss. The possibility of using widely tunable tillers in 200-GHz-spacing wavelcngth-division-multiplexing (WDM) systems is presented. In addition, a lower tuning voltage can be achieved with thinner movable cantilevers. We have fabricated a double-cavity cavity filter with 7.5-pair top, 23.5-pair middle and 3.5-pair bottom GaAs/GaAlAs multilayer mirrors. The filter provides a better shape factor of reflection spectra of 0.41 than a single-cavity filter.

    Scopus

  • Effect of annealing on highly strained GaInAs/GaAs quantum wells

    Kondo T., Arai M., Azuchi M., Uchida T., Miyamoto T., Koyama F.

    Japanese Journal of Applied Physics, Part 2: Letters   41 ( 6 A )   2002.6

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (bulletin of university, research institution)   Publisher:Japanese Journal of Applied Physics, Part 2: Letters  

    We determine the effect of annealing on highly strained GaInAs/GaAs quantum wells (QWs) grown on a (100) n-type GaAs substrate by low-pressure metal-organic vapor phase epitaxy. Highly strained QWs suffer from degradation caused by high-temperature thermal annealing due to its high strain and it is indicated that the overgrowth temperature should be decreased. The comparison of the annealing effects with and without a GaInAs strained buffer layer (SBL) inserted below QWs was carried out. The SBL is effective in maintaining the good crystal quality of highly strained QWs after the overgrowth.

    Scopus

  • Composition dependence of thermal annealing effect on 1.3 μm GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

    Makino S., Miyamoto T., Kageyama T., Ikenaga Y., Arai M., Koyama F., Iga K.

    Japanese Journal of Applied Physics, Part 2: Letters   40 ( 11 B )   2001.11

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (bulletin of university, research institution)   Publisher:Japanese Journal of Applied Physics, Part 2: Letters  

    The thermal annealing process in effective to improve the optical quality of GaInNAs/GaAs quantum wells (QWs). However, a blue shift of the emission peak wavelength occurs during the annealing and it is strongly related to the annealing condition and the composition of GaInNAs/GaAs QWs. In this study, we investigated the dependences of both the annealing condition and the composition on the lasing characteristics of 1.3 μm GaInNAs/GaAs QW lasers.

    Scopus

Presentations 【 display / non-display

  • 光ファイバを用いたオンサイト蛍光測定による牧草の粗タンパク質含量推定の検討

    下田平昂大、坂倉光紀、下村幸資、西大貴、石垣元気、荒井昌和

    日本草地学会札幌大会  2023.3.28 

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    Event date: 2023.3.26 - 2023.3.28

    Language:Japanese   Presentation type:Oral presentation (general)  

  • 光ファイバを用いた牧草の反射スペクトル測定と粗タンパク質含量の相関調査

    下村幸資、下田平昂大、坂倉光紀、西大貴、石垣元気、荒井昌和

    日本草地学会札幌大会  2023.3.27 

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    Event date: 2023.3.26 - 2023.3.28

    Language:Japanese   Presentation type:Oral presentation (general)  

  • 2 段階成長 InAs バッファを用いた GaAs 基板上 InAsSb/InAsP の歪補償構造と発光特性の調査

    本部 好記 ,中川 翔太 , 岩切 優人 , 前田 幸治 ,荒井 昌和

    応用物理学会春季学術講演会  2023.3.16 

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    Event date: 2023.3.15 - 2023.3.18

    Language:Japanese   Presentation type:Oral presentation (general)  

  • GaAs 基板上 InGaAs 格子緩和層の組成と量子井戸の発光強度の相関調査

    臼井 一旗 ,本部 好記 ,鈴木 秀俊,荒井 昌和

    応用物理学会春季学術講演会  2023.3.16 

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    Event date: 2023.3.15 - 2023.3.18

    Language:Japanese   Presentation type:Oral presentation (general)  

  • 光ファイバを用いた牧草の反射・蛍光スペクトル測定

    坂倉光紀, 下田平昂大,下村幸資, 西大貴, 石垣元気,荒井昌和

    近赤外フォーラム  2022.11.16 

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    Event date: 2022.11.15 - 2022.11.17

    Language:Japanese   Presentation type:Poster presentation  

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Awards 【 display / non-display

  • 最優秀賞

    2023.3   高等教育コンソーシアム宮崎   ハイパースペクトルカメラを用いた農産物の非破壊検査技術の開発

    吉岡ひかり、下田平 昂大、荒井昌和

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    Award type:Award from Japanese society, conference, symposium, etc. 

Grant-in-Aid for Scientific Research 【 display / non-display

  • 有機金属気相成長法によって作製した新規広帯域、中赤外発行する量子構造の開発

    Grant number:22K04245  2022.04 - 2025.03

    独立行政法人日本学術振興会  科学研究費補助金  基盤研究(C)

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    Authorship:Coinvestigator(s) 

  • 化合物半導体横方向ヘテロ接合の創成とその電子デバイスへの応用

    Grant number:21H01384  2021 - 2024.03

    独立行政法人日本学術振興会  科学研究費補助金  基盤研究(B)(一般)

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    Authorship:Coinvestigator(s) 

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  • 光センシング用半導体素子の適用波長域を拡大させる新規材料と転位制御の研究

    2016.04 - 2019.03

    科学研究費補助金  基盤研究(C)

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    Authorship:Principal investigator 

    医療応用や環境ガスセンシング用の広帯域な半導体光源の実現のため、様々なバンドギャップ波長をもつ材料を、基板の格子定数の制限を超えて集積するための結晶成長技術を開発する。

Available Technology 【 display / non-display