ARAI Masakazu

写真a

Affiliation

Engineering educational research section Applied Physics and Engineering Program

Title

Associate Professor

External Link

Degree 【 display / non-display

  • 博士(工学) ( 2003.3   東京工業大学 )

Research Areas 【 display / non-display

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

 

Papers 【 display / non-display

  • LiDARとドローンを用いた牧草の収量推定 Reviewed

    荒井昌和,庄中原,中村渓士郎,石垣元気,小川将克

    レーザー研究   第49巻 ( 第10号 )   2021.10

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

  • Crystal Growth and Evaluation of GaP Based Photovoltaic Devices for Blue Laser Light Receiver Reviewed

    Masakazu Arai, Kensuke Hiwada, Shinnosuke Tsuboyama, Keisuke Oishi, and Koji Maeda

    OWPT2020   2020.4

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    Language:English   Publishing type:Research paper (international conference proceedings)  

  • Temperature Dependence of Mid-infrared Photoluminescence for InAs/GaSb Superlattice with Varying GaSb Layer Thickness

    2020.2

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    Language:Japanese   Publishing type:Research paper (bulletin of university, research institution)  

  • Excitation Intensity Dependence of Photoluminesence on InAs/GaSb Superlattice with Constant Ratio of Layer Thickness

    2020.2

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    Language:Japanese   Publishing type:Research paper (bulletin of university, research institution)  

  • Study on Spplication of Vegetation Index to Rstimate Crude Protein Content of Rhodesgrass Reviewed

    Nakamura K., Zhuang Z., Ishigaki G., Arai. M.

    NIR2019   2019.9

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    Language:English   Publishing type:Research paper (international conference proceedings)  

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MISC 【 display / non-display

  • Design and fabrication of double-cavity tunable filter using micromachined structure

    Janto W., Amano T., Koyama F., Matsutani A., Kondo T., Arai M.

    Japanese Journal of Applied Physics, Part 2: Letters   42 ( 7 B )   2003.7

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (bulletin of university, research institution)   Publisher:Japanese Journal of Applied Physics, Part 2: Letters  

    We propose a micromachined tunable optical filter with a double-cavity structure, which exhibits a sharper and flatter filter response than a conventional single-cavity tiller, resulting in lower interchannel crosstalk and lower insertion loss. The possibility of using widely tunable tillers in 200-GHz-spacing wavelcngth-division-multiplexing (WDM) systems is presented. In addition, a lower tuning voltage can be achieved with thinner movable cantilevers. We have fabricated a double-cavity cavity filter with 7.5-pair top, 23.5-pair middle and 3.5-pair bottom GaAs/GaAlAs multilayer mirrors. The filter provides a better shape factor of reflection spectra of 0.41 than a single-cavity filter.

    Scopus

  • Effect of annealing on highly strained GaInAs/GaAs quantum wells

    Kondo T., Arai M., Azuchi M., Uchida T., Miyamoto T., Koyama F.

    Japanese Journal of Applied Physics, Part 2: Letters   41 ( 6 A )   2002.6

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (bulletin of university, research institution)   Publisher:Japanese Journal of Applied Physics, Part 2: Letters  

    We determine the effect of annealing on highly strained GaInAs/GaAs quantum wells (QWs) grown on a (100) n-type GaAs substrate by low-pressure metal-organic vapor phase epitaxy. Highly strained QWs suffer from degradation caused by high-temperature thermal annealing due to its high strain and it is indicated that the overgrowth temperature should be decreased. The comparison of the annealing effects with and without a GaInAs strained buffer layer (SBL) inserted below QWs was carried out. The SBL is effective in maintaining the good crystal quality of highly strained QWs after the overgrowth.

    Scopus

  • Composition dependence of thermal annealing effect on 1.3 μm GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

    Makino S., Miyamoto T., Kageyama T., Ikenaga Y., Arai M., Koyama F., Iga K.

    Japanese Journal of Applied Physics, Part 2: Letters   40 ( 11 B )   2001.11

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (bulletin of university, research institution)   Publisher:Japanese Journal of Applied Physics, Part 2: Letters  

    The thermal annealing process in effective to improve the optical quality of GaInNAs/GaAs quantum wells (QWs). However, a blue shift of the emission peak wavelength occurs during the annealing and it is strongly related to the annealing condition and the composition of GaInNAs/GaAs QWs. In this study, we investigated the dependences of both the annealing condition and the composition on the lasing characteristics of 1.3 μm GaInNAs/GaAs QW lasers.

    Scopus

Presentations 【 display / non-display

  • Optical Reflection and Fluorescence Study for Non-destructive Estimation of Crude Protein Content in Leaves of Grass International conference

    Mitsuki Sakakura

    MOC2021 

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    Event date: 2021.9.26 - 2021.9.29

    Presentation type:Poster presentation  

  • Zn Doping Effect on Surface Morphology of Metamorphic InAs on GaAs Grown by MOVPE International conference

    Shota Nakagawa

    MOC2021 

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    Event date: 2021.9.26 - 2021.9.29

    Presentation type:Poster presentation  

  • GaAs/InAs/GaAsヘテロ構造の電気特性、中赤外受光感 度特性評価

    荒井 昌和 , 中川 翔太 , 前田 幸治

    応用物理学会秋季学術講演会  2021.9.10 

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    Event date: 2021.9.10 - 2021.9.13

    Language:Japanese   Presentation type:Oral presentation (general)  

  • MOVPE法で作製したInAs/GaSb超格子の中赤外発光 ピークに関する温度と励起強度の依存性

    岩切 優人 , 大濱 寛士 , 荒井 昌和 , 藤澤 剛 , 前田 幸治

    応用物理学会秋季学術講演会 

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    Event date: 2021.9.10 - 2021.9.13

    Language:Japanese   Presentation type:Oral presentation (general)  

  • MOVPE法によりGaAs基板上に成長したZnドープInAs膜のラマン分光法による評価

    平田 康史 , 中川 翔太 , 荒井 昌和 , 前田 幸治

    応用物理学会秋季学術講演会 

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    Event date: 2021.9.10 - 2021.9.13

    Language:Japanese   Presentation type:Oral presentation (general)  

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Grant-in-Aid for Scientific Research 【 display / non-display

  • 光センシング用半導体素子の適用波長域を拡大させる新規材料と転位制御の研究

    2016.04 - 2019.03

    科学研究費補助金  基盤研究(C)

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    Authorship:Principal investigator 

    医療応用や環境ガスセンシング用の広帯域な半導体光源の実現のため、様々なバンドギャップ波長をもつ材料を、基板の格子定数の制限を超えて集積するための結晶成長技術を開発する。