ARAI Masakazu

写真a

Affiliation

Engineering educational research section Applied Physics and Engineering Program

Title

Associate Professor

External Link

Degree 【 display / non-display

  • 博士(工学) ( 2003.3   東京工業大学 )

Research Areas 【 display / non-display

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

 

Papers 【 display / non-display

  • LiDARとドローンを用いた牧草の収量推定 Reviewed

    荒井昌和,庄中原,中村渓士郎,石垣元気,小川将克

    レーザー研究   第49巻 ( 第10号 )   2021.10

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

  • Excitation Intensity Dependence of Photoluminesence on InAs/GaSb Superlattice with Constant Ratio of Layer Thickness

    2020.2

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    Language:Japanese   Publishing type:Research paper (bulletin of university, research institution)  

  • Temperature Dependence of Mid-infrared Photoluminescence for InAs/GaSb Superlattice with Varying GaSb Layer Thickness

    2020.2

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    Language:Japanese   Publishing type:Research paper (bulletin of university, research institution)  

  • Microscopic gain analysis of modulation-doped GeSn/SiGeSn quantum wells: epitaxial design toward high-temperature lasing Reviewed

    T. Fujisawa, M. Arai, and K. Saitoh

    Optics Express   27 ( 3 )   2457   2019.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1364/OE.27.002457

    Scopus

  • GeSn/SiGeSn multiple-quantum-well electroabsorption modulator with taper coupler for mid-infrared Ge-on-Si platform

    Akie M., Fujisawa T., Sato T., Arai M., Saitoh K.

    IEEE Journal of Selected Topics in Quantum Electronics   24 ( 6 )   2018.11

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:IEEE Journal of Selected Topics in Quantum Electronics  

    © 2018 IEEE. We propose a taper coupler electroabsorption modulator (EAM) composed of GeSn/SiGeSn multiple-quantum-well (MQW) on Ge-on-Si platform for mid-infrared (2 μm) integrated optical active devices. The epitaxial design is performed by calculating the absorption spectra of GeSn/SiGeSn MQW using many-body theory to investigate the extinction characteristics of GeSn MQW waveguides. Two types of taper couplers are considered for connecting Ge-rib waveguide and GeSn-MQW-highmesa waveguide efficiently. One is an adiabatic taper coupler (ATC) type EAM and it is useful for thin Ge-buffer structure in terms of the extinction ratio. Another is a resonant taper coupler (RTC) type EAM and it is superior to ATC type EAM for thick Ge-buffer. It is confirmed that RTC type EAM can obtain the high extinction characteristics with low-loss and shorter device length (6.87 dB, -3.97 dB, and 215 μm) compared with conventional ATC type EAM for thick Ge-buffer (5.67 dB, -4.9 dB, and 340 μm).

    DOI: 10.1109/JSTQE.2018.2827673

    Scopus

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MISC 【 display / non-display

  • Design and fabrication of double-cavity tunable filter using micromachined structure

    Janto W., Amano T., Koyama F., Matsutani A., Kondo T., Arai M.

    Japanese Journal of Applied Physics, Part 2: Letters   42 ( 7 B )   2003.7

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (bulletin of university, research institution)   Publisher:Japanese Journal of Applied Physics, Part 2: Letters  

    We propose a micromachined tunable optical filter with a double-cavity structure, which exhibits a sharper and flatter filter response than a conventional single-cavity tiller, resulting in lower interchannel crosstalk and lower insertion loss. The possibility of using widely tunable tillers in 200-GHz-spacing wavelcngth-division-multiplexing (WDM) systems is presented. In addition, a lower tuning voltage can be achieved with thinner movable cantilevers. We have fabricated a double-cavity cavity filter with 7.5-pair top, 23.5-pair middle and 3.5-pair bottom GaAs/GaAlAs multilayer mirrors. The filter provides a better shape factor of reflection spectra of 0.41 than a single-cavity filter.

    Scopus

  • Effect of annealing on highly strained GaInAs/GaAs quantum wells

    Kondo T., Arai M., Azuchi M., Uchida T., Miyamoto T., Koyama F.

    Japanese Journal of Applied Physics, Part 2: Letters   41 ( 6 A )   2002.6

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (bulletin of university, research institution)   Publisher:Japanese Journal of Applied Physics, Part 2: Letters  

    We determine the effect of annealing on highly strained GaInAs/GaAs quantum wells (QWs) grown on a (100) n-type GaAs substrate by low-pressure metal-organic vapor phase epitaxy. Highly strained QWs suffer from degradation caused by high-temperature thermal annealing due to its high strain and it is indicated that the overgrowth temperature should be decreased. The comparison of the annealing effects with and without a GaInAs strained buffer layer (SBL) inserted below QWs was carried out. The SBL is effective in maintaining the good crystal quality of highly strained QWs after the overgrowth.

    Scopus

  • Composition dependence of thermal annealing effect on 1.3 μm GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

    Makino S., Miyamoto T., Kageyama T., Ikenaga Y., Arai M., Koyama F., Iga K.

    Japanese Journal of Applied Physics, Part 2: Letters   40 ( 11 B )   2001.11

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (bulletin of university, research institution)   Publisher:Japanese Journal of Applied Physics, Part 2: Letters  

    The thermal annealing process in effective to improve the optical quality of GaInNAs/GaAs quantum wells (QWs). However, a blue shift of the emission peak wavelength occurs during the annealing and it is strongly related to the annealing condition and the composition of GaInNAs/GaAs QWs. In this study, we investigated the dependences of both the annealing condition and the composition on the lasing characteristics of 1.3 μm GaInNAs/GaAs QW lasers.

    Scopus

Presentations 【 display / non-display

  • Effects of Window Layer on InGaAsP Photovoltaic Device for 1.06-µm-range Laser Power Transmission International conference

    Yuga motomura, Akira kushiyama, Kensuke nishioka, Masakazu arai

    OWPT 2022  2022.4 

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    Event date: 2022.4.18 - 2022.4.21

    Language:English   Presentation type:Oral presentation (general)  

  • 牧草中の粗タンパク質含量の非破壊推定のための蛍光測定

    坂倉光紀、北直矢、今東海都、下田平昂大、下村幸資、石垣元気、荒井昌和

    日本草地学会  2022.3 

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    Event date: 2022.3.25 - 2022.3.27

    Language:Japanese   Presentation type:Oral presentation (general)  

  • 中赤外光吸収測定による牧草中の硝酸態窒素含量推定の検討

    下田平昂大・石垣元気・荒井昌和

    日本草地学会  2022.3 

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    Event date: 2022.3.25 - 2022.3.27

    Language:Japanese   Presentation type:Oral presentation (general)  

  • レーザ受光用InGaAsP光電変換素子における窓層の効果の評価

    本村優芽、櫛山爽、西岡賢祐、荒井昌和

    応用物理学会学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  • MOVPE法で作製したInAs/GaSb超格子層数の違いによる中赤外発光形状に関する実験と計算の比較

    岩切 優人,荒井 昌和,藤澤 剛,前田 幸治

    応用物理学会学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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Grant-in-Aid for Scientific Research 【 display / non-display

  • 化合物半導体横方向ヘテロ接合の創成とその電子デバイスへの応用

    Grant number:21H01384  2021 - 2024.03

    科学研究費補助金  基盤研究(B)(一般)

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    Authorship:Coinvestigator(s) 

  • 光センシング用半導体素子の適用波長域を拡大させる新規材料と転位制御の研究

    2016.04 - 2019.03

    科学研究費補助金  基盤研究(C)

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    Authorship:Principal investigator 

    医療応用や環境ガスセンシング用の広帯域な半導体光源の実現のため、様々なバンドギャップ波長をもつ材料を、基板の格子定数の制限を超えて集積するための結晶成長技術を開発する。