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Affiliation |
Engineering educational research section Semiconductor Science and Applied Physics Program |
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Professor |
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ARAI Masakazu
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Research Areas 【 display / non-display 】
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
Papers 【 display / non-display 】
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Controlling Stem-End Rot in Mangoes Using Laser Irradiation Reviewed
Masakazu ARAI, Yudai IWAKIRI, Atsuhiro OHKUBO, and Kaito MAKINOSE
The review of laser engineering 54 ( 1 ) 11 - 14 2026.1
Authorship：Lead author, Corresponding author Language：Japanese Publishing type：Research paper (scientific journal)
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Nakano H., Yanagimoto T., Kunitake K., Takashima R., Fujisawa T., Maeda K., Arai M.
Physica Status Solidi A Applications and Materials Science 223 ( 1 ) 2026.1
Authorship：Last author, Corresponding author Publishing type：Research paper (scientific journal) Publisher：Physica Status Solidi A Applications and Materials Science
In this study, InGaAs/GaAsSb Type-II quantum wells (QWs) are investigated as promising broadband light sources for optical coherence tomography (OCT). OCT requires a wide spectral width for high axial resolution within the 700–1400 nm biological window. However, current superluminescent diodes (SLDs) using conventional materials have wavelength limitations. The GaAs-based Type-II QWs are promising for the 1.0–1.4 µm range, enabling wavelengths beyond 1.3 µm on GaAs substrates. Three QW structures (Type-I, Type-II W-shaped, Type-II) are fabricated on GaAs substrates via metal–organic vapor-phase epitaxy (MOVPE), and their photoluminescence (PL) spectra are measured. Type-II QWs consistently exhibit the widest broadband PL spectrum. Notably, the 5 nm well width Type-II QW shows the broadest average PL full width at half maximum (FWHM), possibly because of narrower conduction-band quantum level spacing. The SLD fabricated with 5 nm well width InGaAs/GaAsSb Type-II QW as the active layer has a significant broadband electroluminescence (EL) spectrum. A maximum EL spectrum FWHM of approximately 180 nm is observed. This surpasses that of conventional Type-I QW SLDs, highlighting InGaAs/GaAsSb Type-II QWs on GaAs substrates as highly promising OCT broadband light sources.
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Hayashi F., Muto H., Kato R., Zuo R., Ye H., Kajii H., Morifuji M., Yagi T., Maruta A., Arai M., Kondow M.
Physica Status Solidi A Applications and Materials Science 223 ( 2 ) 2026.1
Publishing type：Research paper (scientific journal) Publisher：Physica Status Solidi A Applications and Materials Science
To address the low output power issue of circular defect in 2D photonic crystal (PhC) lasers, we propose a novel fabrication process that spatially confines the active quantum dot (QD) region within the laser cavity. Our goal is to confine the QDs within the resonator while removing them from the waveguide region. Selective etching by inductively coupled plasma etching and selective regrowth by metal–organic chemical vapor deposition are used to remove QDs from the waveguide region while confining them within the resonator. Scanning electron microscopy imaging and optical measurements demonstrate that a flat regrown surface is obtained and confirm the presence of a whispering gallery mode in the fabricated structures. Furthermore, lasing is observed at a threshold of 28 μW. These results validate the effectiveness of spatially confining QDs as a technique for improving device performance and provide insight into efficient optical control by PhC structures. Our findings also indicate that selective core regrowth is a viable strategy to increase the efficiency of laser output by minimizing QD-induced absorption losses.
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Oshimo T., Motomura Y., Tabata K., Yamada T., Aonuki S., Ochiai N., Suzuki Y., Kashiwakura K., Toriumi Y., Takahashi M., Suzuki J., Aoyama R., Uchida S., Akahane K., Nishioka K., Asami M., Arai M.
Physica Status Solidi A Applications and Materials Science 223 ( 2 ) 2026.1
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Physica Status Solidi A Applications and Materials Science
Herein, InGaAsP photovoltaic devices are fabricated for 1.06 μm band optical wireless power transmission. The fabrication process incorporates multi-junctions through the introduction of tunnel junctions, an increase in the thickness of the surface electrode, and an outer circular electrode. The epitaxial layers are grown via the metal–organic vapor-phase epitaxy method. Multi-junctions are realized via the utilization of Type II tunnel junctions. Results show that an increase in the thickness of the photoresist results in the fabrication of a thicker electrode. The implementation of an outer circular electrode results in a maximum power conversion efficiency that exceeds 44% at a laser irradiation intensity of 1.5 W cm<sup>−2</sup>.
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Early Detection of Mango Stem-End Rot Disease Using a Hyperspectral Camera Reviewed
Atsuhiro OHKUBO, Kaito MAKINOSE, Hikari YOSHIOKA, Yudai IWAKIRI, and Masakazu ARAI
The review of laser engineering 54 ( 1 ) 36 - 41 2026.1
Authorship：Last author, Corresponding author Language：Japanese Publishing type：Research paper (scientific journal)
MISC 【 display / non-display 】
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Miyake H., Sugiyama M., Miyamoto Y., Arai M., Kumakura K., Nitta S., Arita M., Katayama R., Irisawa T., Higashiwaki M., Tomioka K.
Journal of Crystal Growth 531 2020.2
Language：Japanese Publishing type：Rapid communication, short report, research note, etc. (scientific journal) Publisher：Journal of Crystal Growth
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Design and fabrication of double-cavity tunable filter using micromachined structure
Janto W., Amano T., Koyama F., Matsutani A., Kondo T., Arai M.
Japanese Journal of Applied Physics, Part 2: Letters 42 ( 7 B ) 2003.7
Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (bulletin of university, research institution) Publisher：Japanese Journal of Applied Physics, Part 2: Letters
We propose a micromachined tunable optical filter with a double-cavity structure, which exhibits a sharper and flatter filter response than a conventional single-cavity tiller, resulting in lower interchannel crosstalk and lower insertion loss. The possibility of using widely tunable tillers in 200-GHz-spacing wavelcngth-division-multiplexing (WDM) systems is presented. In addition, a lower tuning voltage can be achieved with thinner movable cantilevers. We have fabricated a double-cavity cavity filter with 7.5-pair top, 23.5-pair middle and 3.5-pair bottom GaAs/GaAlAs multilayer mirrors. The filter provides a better shape factor of reflection spectra of 0.41 than a single-cavity filter.
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Effect of annealing on highly strained GaInAs/GaAs quantum wells
Kondo T., Arai M., Azuchi M., Uchida T., Miyamoto T., Koyama F.
Japanese Journal of Applied Physics, Part 2: Letters 41 ( 6 A ) 2002.6
Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (bulletin of university, research institution) Publisher：Japanese Journal of Applied Physics, Part 2: Letters
We determine the effect of annealing on highly strained GaInAs/GaAs quantum wells (QWs) grown on a (100) n-type GaAs substrate by low-pressure metal-organic vapor phase epitaxy. Highly strained QWs suffer from degradation caused by high-temperature thermal annealing due to its high strain and it is indicated that the overgrowth temperature should be decreased. The comparison of the annealing effects with and without a GaInAs strained buffer layer (SBL) inserted below QWs was carried out. The SBL is effective in maintaining the good crystal quality of highly strained QWs after the overgrowth.
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Makino S., Miyamoto T., Kageyama T., Ikenaga Y., Arai M., Koyama F., Iga K.
Japanese Journal of Applied Physics, Part 2: Letters 40 ( 11 B ) 2001.11
Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (bulletin of university, research institution) Publisher：Japanese Journal of Applied Physics, Part 2: Letters
The thermal annealing process in effective to improve the optical quality of GaInNAs/GaAs quantum wells (QWs). However, a blue shift of the emission peak wavelength occurs during the annealing and it is strongly related to the annealing condition and the composition of GaInNAs/GaAs QWs. In this study, we investigated the dependences of both the annealing condition and the composition on the lasing characteristics of 1.3 μm GaInNAs/GaAs QW lasers.
Presentations 【 display / non-display 】
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Emission Changes in InAs/GaAsSb Superlattices Fabricated by Metal-Organic Vapor Phase Epitaxy with As Composition
2025.3
Event date： 2025.3.14 - 2025.3.17
Language：Japanese Presentation type：Oral presentation (general)
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Broad Band Photoluminescence from InGaAs/GaAsSb Type-II Quantum Well and Application to Super Luminescent Diode
2025.3
Event date： 2025.3.14 - 2025.3.17
Language：Japanese Presentation type：Oral presentation (general)
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Fabrication of 1.3-µm Band InGaAs/GaAsSb/InGaAs Type-II Laser Grown by Metal Organic Vapor Phase Epitaxy
2025.3
Event date： 2025.3.14 - 2025.3.17
Language：Japanese Presentation type：Oral presentation (general)
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CirDレーザ実現に向けたInAs量子ドット埋め込み領域を 共振器内に限定したコア層の作製
林楓真, 武藤広高, 加藤諒, 左如氷, 葉漢嶠, 梶井博武, 森藤正人, 八木哲哉, 丸田章博,荒井昌和 近藤正彦
Photonic Device Workshop 2024 2024.12
Event date： 2024.12.12 - 2024.12.13
Language：Japanese Presentation type：Oral presentation (general)
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ハイパースペクトルカメラを用いたマンゴー軸腐病の識別
牧ノ瀬開人、吉岡ひかり、大久保敦広、岩切優空、荒井昌和
近赤外フォーラム 2024.11
Event date： 2024.11.13 - 2024.11.15
Language：Japanese Presentation type：Oral presentation (general)
Awards 【 display / non-display 】
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最優秀賞
2023.3 高等教育コンソーシアム宮崎 ハイパースペクトルカメラを用いた農産物の非破壊検査技術の開発
吉岡ひかり、下田平 昂大、荒井昌和
Award type：Award from Japanese society, conference, symposium, etc.
Grant-in-Aid for Scientific Research 【 display / non-display 】
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格子緩和層とType-II型ヘテロ材料を用いた半導体レーザによる高温動作限界の打破
Grant number：24K07610 2024.04 - 2027.03
独立行政法人日本学術振興会 科学研究費基金 基盤研究(C)
Authorship：Principal investigator
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有機金属気相成長法によって作製した新規広帯域、中赤外発行する量子構造の開発
Grant number：22K04245 2022.04 - 2025.03
独立行政法人日本学術振興会 科学研究費基金 基盤研究(C)
Authorship：Coinvestigator(s)
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化合物半導体横方向ヘテロ接合の創成とその電子デバイスへの応用
Grant number：21H01384 2021 - 2024.03
独立行政法人日本学術振興会 科学研究費補助金 基盤研究(B)
Authorship：Coinvestigator(s)
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光センシング用半導体素子の適用波長域を拡大させる新規材料と転位制御の研究
Grant number：16K06305 2016.04 - 2019.03
科学研究費補助金 基盤研究(C)
Authorship：Principal investigator
医療応用や環境ガスセンシング用の広帯域な半導体光源の実現のため、様々なバンドギャップ波長をもつ材料を、基板の格子定数の制限を超えて集積するための結晶成長技術を開発する。
Available Technology 【 display / non-display 】
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光センシングの農業への応用
III-V族化合物半導体結晶膜の作製
光ファイバ通信や光無線給電用デバイスの作製Home Page： 荒井研究室
Related fields where technical consultation is available：・光を用いた農業センシング
・化合物半導体の新規材料，構造開発
・光無線給電