Papers - SAKAI Kentaro
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Investigation of Ni induced deep levels in N-Type Si by a temperature dependence of piezoelectric photothermal and surface photovoltage signals
S. Sato, S. Fukushima, S. Tanaka, K. Sakai, A. Fukuyama, T. Ikari
2005 International Semiconductor Device Research Symposium 2005 ( 1596160 ) 410 - 411 2005.12
Language：English Publishing type：Research paper (international conference proceedings)
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Piezoelectric photothermal and surface photovoltage spectra in extremely thin GaInNAs/GaAs single quantum well
S. Fukushima, T. Ikari, A. Fukuyama, K. Sakai, H. Yokoyama, M. Kondow
2005 International Semiconductor Device Research Symposium 2005 ( 1596163 ) 416 - 417 2005.12
Language：English Publishing type：Research paper (international conference proceedings)
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Carrier recombination mechanism at SiO2/Si interface studied by a photo-thermal and a surface photo-voltage spectroscopy
T. Saisho, K. Sakai, H. Hayashi, S. Sato, A. Fukuyama, M. Suemitsu, T. Ikari
2005 International Semiconductor Device Research Symposium 2005 ( 1596162 ) 414 - 415 2005.12
Language：English Publishing type：Research paper (international conference proceedings)
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Piezoelectric photo thermal and surface photo voltage spectra of chalcopyrite CuGaSe2 epitaxial layers fabricated on semi-insulating GaAs
N. Ohryoji, A. Goto, H. Yokoyama, K. Sakai, A. Fukuyama, A. Yamada, S. Niki, T. Ikari
2005 International Semiconductor Device Research Symposium 2005 ( 1596161 ) 412 - 413 2005.12
Language：English Publishing type：Research paper (international conference proceedings)
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Dependence of oxygen flow rate on piezoelectric photothermal spectra of ZnO thin films grown by a reactive plasma deposition Reviewed
T. Kakeno, K. Sakai, H. Komaki, K. Yoshino, H. Sakemi, K. Awai, T. Yamamoto, T. Ikari
Materials Science & Engineering B 118 ( 1-3 ) 70 - 73 2005.4
Language：English Publishing type：Research paper (scientific journal)
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Impurity levels in layered semiconductor GaS doped with Cu Reviewed
S. Shigetomi, K. Sakai, T. Ikari
Japanese Journal of Applied Physics 44 ( 3 ) 1306 - 1309 2005.3
Language：English Publishing type：Research paper (scientific journal)
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Impurity and defect centers of n-type 4H-SiC single crystals investigated by a photoluminescence and piezoelectric photo thermal spectroscopies Reviewed
K. Sakai, A. Fukuyama, S. Shigetomi, T. Ikari
Solid-State Electronics 48 ( 10-11 ) 1873 - 1876 2004.10
Language：English Publishing type：Research paper (scientific journal)
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Optical properties of GaAsNSe/GaAs superlattice investigated by means of piezoelectric photothermal spectroscopy for nonradiative electron transitions Reviewed
K. Sakai, S. Fukushima, A. Fukuyama, K. Uesugi, I. Suemune, T. Ikari
IEE Proceedings - Optoelectronics 151 ( 5 ) 328 - 330 2004.10
Language：English Publishing type：Research paper (international conference proceedings)
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製膜速度による微結晶シリコン薄膜の圧電素子光熱分光スペクトル変化
王萍, 多田真樹, 大田将志, 境健太郎, 福山敦彦, 碇哲雄
宮崎大学工学部紀要 33 57 - 61 2004.10
Language：Japanese Publishing type：Research paper (bulletin of university, research institution)
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Photoluminescence of layered semiconductor GaS doped with Mn Reviewed
S. Shigetomi, K. Sakai, T. Ikari
Physica Status Solidi b 241 ( 11 ) 2607 - 2612 2004.6
Language：English Publishing type：Research paper (scientific journal)
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Autocatalytic-reaction analysis of the time-evolution of the thermal recovery of EL2 in semi-insulating GaAs Reviewed
A. Fukuyama, K. Sakai, T. Ikari, Y. Akashi, M. Suemitsu
Physica B 348 348 ( 1-4 ) 1 - 5 2004.5
Language：English Publishing type：Research paper (scientific journal)
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Piezoelectric photothermal study of the optical absorption spectra of microcrystalline silicon Reviewed
P. Wang, M. Tada, M. Ohta, K. Sakai, A. Fukuyama, T. Ikari
Japanese Journal of Applied Physics 43 ( 5B ) 2965 - 2968 2004.5
Language：English Publishing type：Research paper (scientific journal)
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Characterization of deep levels in n-type 4H-SiC single crystals by means of a piezoelectric photothermal and a photoluminescence spectroscopy Reviewed
K. Sakai, S. Tada, A. Fukuyama, T. Ikari
Physica B 340-342 137 - 140 2003.12
Language：English Publishing type：Research paper (scientific journal)
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Effect of three-stage isothermal annealing on the nucleation process in GeSe2 Reviewed
K. Maeda, Y. Kai, T. Suginohara, H. Yokoyama, K. Sakai, T. Ikari, S.O. Kasap
Journal of Materials Science: Materials in Electronics 14 ( 10-12 ) 839 - 840 2003.10
Language：English Publishing type：Research paper (scientific journal)
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熱処理によるGeSe2ガラスの結晶核生成過程の研究
甲斐康之, 境健太郎, 横山宏有, 吉野賢二, 碇哲雄, 前田幸治
宮崎大学工学部紀要 32 129 - 133 2003.7
Language：Japanese Publishing type：Research paper (bulletin of university, research institution)
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Ge-Se系ガラスの結晶化過程の組成依存性
水本卓, 境健太郎, 横山宏有, 吉野賢二, 碇哲雄, 前田幸治
宮崎大学工学部紀要 32 135 - 139 2003.7
Language：Japanese Publishing type：Research paper (bulletin of university, research institution)
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Photo-enhanced crystallization by laser irradiation and thermal annealing in amorphous GeSe2 Reviewed
K. Sakai, K. Maeda, H. Yokoyama, T. Ikari
Journal of Non-Crystalline Solids 320 ( 1-3 ) 223 - 230 2003.6
Language：English Publishing type：Research paper (scientific journal)
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Piezoelectric photothermal spectra of Co doped ZnO semiconductor Reviewed
K. Sakai, A. Fukuyama, T. Toyoda, T. Ikari
Japanese Journal of Applied Physics 41 ( 1-5B ) 3371 - 3373 2002.5
Language：English Publishing type：Research paper (scientific journal)
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The intensity and wavelength dependence for photo-induced crystallization process in amorphous GeSe2 Reviewed
K. Sakai, K. Maeda, H. Yokoyama, T. Ikari
Springer Proceedings in Physics 87 226 - 227 2001.12
Language：English Publishing type：Research paper (international conference proceedings)
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Piezoelectric photothermal study of AlxGa1–xAs epitaxial layer (x = 0.22, 0.28, and 0.5) grown on semi-insulating GaAs substrate Reviewed
A. Fukuyama, H. Fukuhara, S. Tanaka, A. Memon, K. Sakai, Y. Akashi, T. Ikari
Journal of Applied Physics 90 ( 9 ) 4385 - 4391 2001.11
Language：English Publishing type：Research paper (scientific journal)