論文 - 武田 彩希
-
X-ray generation by inverse Compton scattering at the superconducting RF test facility
Shimizu H., Akemoto M., Arai Y., Araki S., Aryshev A., Fukuda M., Fukuda S., Haba J., Hara K., Hayano H., Higashi Y., Honda Y., Honma T., Kako E., Kojima Y., Kondo Y., Lekomtsev K., Matsumoto T., Michizono S., Miyoshi T., Nakai H., Nakajima H., Nakanishi K., Noguchi S., Okugi T., Sato M., Shevelev M., Shishido T., Takenaka T., Tsuchiya K., Urakawa J., Watanabe K., Yamaguchi S., Yamamoto A., Yamamoto Y., Sakaue K., Hosoda S., Iijima H., Kuriki M., Tanaka R., Kuramoto A., Omet M., Takeda A.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 772 26 - 33 2015年2月
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
© 2014 Elsevier B.V. All rights reserved. Quasi-monochromatic X-rays with high brightness have a broad range of applications in fields such as life sciences, bio-, medical applications, and microlithography. One method for generating such X-rays is via inverse Compton scattering (ICS). X-ray generation experiments using ICS were carried out at the superconducting RF test facility (STF) accelerator at KEK. A new beam line, newly developed four-mirror optical cavity system, and new X-ray detector system were prepared for experiments downstream section of the STF electron accelerator. Amplified pulsed photons were accumulated into a four-mirror optical cavity and collided with an incoming 40 MeV electron beam. The generated X-rays were detected using a microchannel plate (MCP) detector for X-ray yield measurements and a new silicon-on-insulator (SOI) detector system for energy measurements. The detected X-ray yield by the MCP detector was 1756.8±272.2 photons/(244 electron bunches). To extrapolate this result to 1 ms train length under 5 Hz operations, 4.60×105 photons/1%-bandwidth were obtained. The peak X-ray energy, which was confirmed by the SOI detector, was 29 keV, and this is consistent with ICS X-rays.
-
Shrestha S., Kamehama H., Kawahito S., Yasutomi K., Kagawa K., Takeda A., Tsuru T., Arai Y.
Proceedings of SPIE - The International Society for Optical Engineering 9593 2015年
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:Proceedings of SPIE - The International Society for Optical Engineering
© 2015 SPIE. This paper presents a low-noise wide-dynamic-range pixel design for a high-energy particle detector in astronomical applications. A silicon on insulator (SOI) based detector is used for the detection of wide energy range of high energy particles (mainly for X-ray). The sensor has a thin layer of SOI CMOS readout circuitry and a thick layer of high-resistivity detector vertically stacked in a single chip. Pixel circuits are divided into two parts; signal sensing circuit and event detection circuit. The event detection circuit consisting of a comparator and logic circuits which detect the incidence of high energy particle categorizes the incident photon it into two energy groups using an appropriate energy threshold and generate a two-bit code for an event and energy level. The code for energy level is then used for selection of the gain of the in-pixel amplifier for the detected signal, providing a function of high-dynamic-range signal measurement. The two-bit code for the event and energy level is scanned in the event scanning block and the signals from the hit pixels only are read out. The variable-gain in-pixel amplifier uses a continuous integrator and integration-time control for the variable gain. The proposed design allows the small signal detection and wide dynamic range due to the adaptive gain technique and capability of correlated double sampling (CDS) technique of kTC noise canceling of the charge detector.
DOI: 10.1117/12.2188019
-
Investigation of charge-collection efficiency of Kyoto's X-ray astronomical SOI pixel sensors, XRPIX
Matsumura H., Tsuru T., Tanaka T., Nakashima S., Ryu S., Takeda A., Arai Y., Miyoshi T.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 765 183 - 186 2014年11月
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
© 2014 Elsevier B.V. We are developing a monolithic active pixel sensor referred to as XRPIX for X-ray astronomy on the basis of silicon-on-insulator CMOS technology. A crucial issue in our recent development is the impact of incomplete charge collection on the spectroscopic performance. In this paper, we report the spectral responses of several devices having different intra-pixel structures or produced from different wafers. We found that an emission line spectrum exhibits large low-energy tails when the size of the buried p-well, which acts as the charge-collection node, is small. Moreover, in charge sharing events, the peak channels of the emission lines shift toward channels lower than those without charge sharing. This peak shift is more pronounced as the distance between the pixel center and the position of incident photon increases. This suggests that the charge-collection efficiency is degraded at the pixel boundary. We also found that the charge-collection efficiency depends on the strength of the electric field at the interface of the depletion and insulator layers.
-
Bandgap voltage reference and temperature sensor in novel SOI technology 国際共著
Glab S., Baszczyk M., Dorosz P., Idzik M., Kucewicz W., Sapor M., Kapusta P., Arai Y., Miyoshi T., Takeda A.
2014 International Conference on Signals and Electronic Systems, ICSES 2014 2014年11月
記述言語:英語 掲載種別:研究論文(学術雑誌) 出版者・発行元:2014 International Conference on Signals and Electronic Systems, ICSES 2014
© 2014 IEEE. A bandgap voltage reference together with absolute temperature sensor (PTAT) designed in 200 nm SOI technology is presented in this paper. Three slightly different versions were designed to verify the diode models available in the SOI process. For more extensive SOI process study the chip was fabricated on three different substrates. The bandgap reference circuit generates Vref = 1.27 V with 10 mV chip to chip spread. The best bandgap version has temperature coefficient -35 μV/K. Circuit design, simulations and comparison with measured performance are presented.
-
Synthetizable digital library created to facilitate design of SOI detectors in 200 nm SOI technology
Glab S., Baszczyk M., Dorosz P., Idzik M., Kucewicz W., Sapor M., Kapusta P., Arai Y., Miyoshi T., Takeda A.
2014 International Conference on Signals and Electronic Systems, ICSES 2014 2014年11月
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:2014 International Conference on Signals and Electronic Systems, ICSES 2014
© 2014 IEEE. A digital library designed in 200 nm fully depleted silicon on insulator (FD-SOI) technology is presented in this paper. For the purpose of a new technology the digital library containing 93 elements was designed. Created library allows automatic synthesis of digital blocks based on their description in hardware description languages (HDL). To preserve area occupied by each library element, height of 7.68 μm was chosen for all layout cells. The paper presents designed digital library., compares its performance with digital library made in Austria Mikro Systeme (AMS) 0.35 μm and shows test structures' measurements results.
-
Miyoshi T., Ahmed M., Arai Y., Fujita Y., Ikemoto Y., Takeda A., Tauchi K.
Journal of Instrumentation 9 ( 5 ) 2014年5月
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:Journal of Instrumentation
We are developing monolithic pixel detector using fully-depleted (FD) silicon-on-insulator (SOI) pixel process technology. The SOI substrate is high resistivity silicon with p-n junctions and another layer is a low resistivity silicon for SOI-CMOS circuitry. Tungsten vias are used for the connection between two silicons. Since flip-chip bump bonding process is not used, high sensor gain in a small pixel area can be obtained. In 2010 and 2011, high-resolution integration-type SOI pixel sensors, DIPIX and INTPIX5, have been developed. The characterizations by evaluating pixel-to-pixel crosstalk, quantum efficiency (QE), dark noise, and energy resolution were done. A phase-contrast imaging was demonstrated using the INTPIX5 pixel sensor for an X-ray application. The current issues and future prospect are also discussed. © 2014 IOP Publishing Ltd and Sissa Medialab srl.
-
19aSB-6 SOI技術を用いたX線天文用検出器XRPIXの電荷種集効率の調査(19aSB X線・γ線,宇宙線・宇宙物理領域)
松村 英晃, 中島 真也, 香村 芳樹, 初井 宇記, 亀島 敬, 尾崎 隆吉, 武井 大, 和賀井 達也, 鶴 剛, 田中 孝明, 武田 彩希, 新井 康夫, 森 浩二, 西岡 祐介, 竹中 亮太, 幸村 孝由
日本物理学会講演概要集 69 ( 0 ) 2014年
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:一般社団法人 日本物理学会
-
Monolithic pixel detectors fabricated with single and double SOI wafers
Miyoshi T., Arai Y., Fujita Y., Hara K., Honda S., Ikegami Y., Ikemoto Y., Mitsui S., Takeda A., Tauchi K., Tsuboyama T., Unno Y.
Proceedings of Science 2014年
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:Proceedings of Science
© Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike Licence. Monolithic pixel detectors have been fabricated with single and double SOI wafers using SOI technology for a next-generation radiation sensor. A single SOI sensor consists of a thin SOI layer as SOI-CMOS circuit, a thick silicon substrate as a sensor, and a buried oxide layer as an insulator between two silicon layers. A double SOI sensor has another thin SOI layer to prevent unwanted effects such as the back-gate effect, the sensor - circuit crosstalk and total ionization dose effect. In 2013, the integration type pixel sensor, INTPIXh2, has been fabricated for the evaluation of single and double SOI sensors. The document describes comparison test results in single and double SOI sensors by measuring the leakage current and X-ray spectra. X-ray spectra in double SOI sensors were obtained for the first time. The problem and future prospect are discussed.
-
Development and performance of kyoto's x-ray astronomical SOI pixel (SOIPIX) sensor
Tsuru T., Matsumura H., Takeda A., Tanaka T., Nakashima S., Arai Y., Mori K., Takenaka R., Nishioka Y., Kohmura T., Hatsui T., Kameshima T., Ozaki K., Kohmura Y., Wagai T., Takei D., Kawahito S., Kagawa K., Yasutomi K., Kamehama H., Shrestha S.
Proceedings of SPIE - The International Society for Optical Engineering 9144 2014年
記述言語:英語 掲載種別:研究論文(学術雑誌) 出版者・発行元:Proceedings of SPIE - The International Society for Optical Engineering
© 2014 SPIE. We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5-10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3-40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300 eV (FWHM) at 6 keV and a read-out noise of 33 e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-K? and K?. Moreover, we produced a fully depleted layer with a thickness of 500 ?m. The event-driven readout mode has already been successfully demonstrated.
DOI: 10.1117/12.2057158
-
Development and evaluation of an event-driven SOI pixel detector for X-ray astronomy 査読あり
Takeda A., Tsuru T., Tanaka T., Matsumura H., Arai Y., Mori K., Nishioka Y., Takenaka R., Kohmura T., Nakashima S., Kawahito S., Kagawa K., Yasutomi K., Kamehama H., Shrestha S.
Proceedings of Science 0 2014年
担当区分:筆頭著者 記述言語:英語 掲載種別:研究論文(学術雑誌) 出版者・発行元:Proceedings of Science
© Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike Licence. We have been developing a monolithic active pixel sensor with silicon-on-insulator technology for use in X-ray astronomical satellite missions. Our aim is to replace the X-ray charge-coupled device - which is the standard detector in the field - with a device that exhibits a high-coincidence time resolution (i.e., ∼1 μs), superior hit-position readout time (i.e., ∼10 μs), and wider bandpass (i.e., 0.3-40 keV), in addition to having comparable performance in imaging spectroscopy. To realize this detector, we have developed prototype detectors called the "XRPIX" series. XRPIX contains a comparator circuit in each pixel to detect an X-ray photon, and it offers an intra-pixel hit trigger (timing) and two-dimensional hit-pattern (position) outputs. Therefore, XRPIX is capable of direct access to selected pixels to read out the signal amplitude. X-ray signal readout by this function is called an "event-driven readout." In our previous study, we successfully demonstrated the X-ray spectra acquisition by the event-driven readout. However, there were some problems in the circuit operation. Recently, these investigations progressed because of many evaluation tests. In this paper, we describe the development and the evaluation of the event-driven readout by XRPIX.
-
Monolithic pixel detectors with 0.2 μm FD-SOI pixel process technology
Miyoshi T., Arai Y., Chiba T., Fujita Y., Hara K., Honda S., Igarashi Y., Ikegami Y., Ikemoto Y., Kohriki T., Ohno M., Ono Y., Shinoda N., Takeda A., Tauchi K., Tsuboyama T., Tadokoro H., Unno Y., Yanagihara M.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 732 530 - 534 2013年7月
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Truly monolithic pixel detectors were fabricated with 0.2μm SOI pixel process technology by collaborating with LAPIS Semiconductor Co., Ltd. for particle tracking experiment, X-ray imaging and medical applications. CMOS circuits were fabricated on a thin SOI layer and connected to diodes formed in the silicon handle wafer through the buried oxide layer. We can choose the handle wafer and therefore high-resistivity silicon is also available. Double SOI (D-SOI) wafers fabricated from Czochralski (CZ)-SOI wafers were newly obtained and successfully processed in 2012. The top SOI layers are used as electric circuits and the middle SOI layers used as a shield layer against the back-gate effect and cross-talk between sensors and CMOS circuits, and as an electrode to compensate for the total ionizing dose (TID) effect. In 2012, we developed two SOI detectors, INTPIX5 and INTPIX3g. A spatial resolution study was done with INTPIX5 and it showed excellent performance. The TID effect study with D-SOI INTPIX3g detectors was done and we confirmed improvement of TID tolerance in D-SOI sensors. © 2013 Elsevier B.V.
-
Nakashima S., Gando Ryu S., Tanaka T., Go Tsuru T., Takeda A., Arai Y., Imamura T., Ohmoto T., Iwata A.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 731 74 - 78 2013年5月
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
We have been developing active pixel sensors based on silicon-on-insulator technology for future X-ray astronomy missions. Recently we fabricated the new prototype named "XRPIX2", and investigated its spectroscopic performance. For comparison and evaluation of different chip designs, XRPIX2 consists of 3 pixel types: Small Pixel, Large Pixel 1, and Large Pixel 2. In Small Pixel, we found that the gains of the 68% pixels are within 1.4% of the mean value, and the energy resolution is 656 eV (FWHM) for 8 keV X-rays, which is the best spectroscopic performance in our development. The pixel pitch of Large Pixel 1 and Large Pixel 2 is twice as large as that of Small Pixel. Charge sharing events are successfully reduced for Large Pixel 1. Moreover Large Pixel 2 has multiple nodes for charge collection in a pixel. We confirmed that the multi-nodes structure is effective to increase charge collection efficiency. © 2013 Elsevier B.V. All rights reserved.
-
Takeda A., Arai Y., Tsuru T., Tanaka T., Nakashima S., Matsumura H., Imamura T., Ohmoto T., Iwata A.
IEEE Nuclear Science Symposium Conference Record 2013年
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:IEEE Nuclear Science Symposium Conference Record
We have been developing a monolithic active pixel sensor with the silicon-on-insulator (SOI) CMOS technology for use in future X-ray astronomical satellite mission. Our objective is to replace the X-ray Charge Coupled Device (CCD), which is the standard detector in the field, by offering high coincidence time resolution (∼ 50 ns), superior hit-position readout time (∼ 10 μs), and wider bandpass (0.5 - 40 keV) in addition to having comparable performances in imaging spectroscopy. In order to realize this detector, we have developed prototype detectors, called 'XRPIX' series. XRPIX contains comparator circuit in each pixel to detect an X-ray photon injection; it offers intra-pixel hit trigger (timing) and two-dimensional hit-pattern (position) outputs. Therefore, XRPIX is capable of direct access to selected pixels to read out the signal amplitude. In our previous study, we evaluated its basic performance and obtained the X-ray spectra by this system. The next step is improvement in spectroscopic performance. Then, we designed a new prototype, called 'XRPIX3', which has charge sensitive amplifier (CSA) in each pixel. The pixel circuit with CSA works good. It is 3.4 times higher gain as compared with normal pixel circuit. Furthermore, XRPIX3 resolved Mn-Kα and Mn-Kβ successfully for the first time in our series. The readout noise is 33 e- rms and the energy resolution is about 300 eV FWHM at 5.9 keV. In this paper, we report on the design and test results of this new device. © 2013 IEEE.
-
Evaluation of a SOI pixel sensor with thick depletion layer for future X-ray astronomical missions
Nakashima S., Ryu S., Tsuru T., Takeda A., Arai Y., Miyoshi T., Ichimiya R., Ikemoto Y., Imamura T., Ohmoto T., Iwata A.
AIP Conference Proceedings 1427 259 - 260 2012年5月
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:AIP Conference Proceedings
We report on the evaluation test of our novel pixel sensor named "XRPIX1-FZ" which is developed for the future X-ray astronomy mission. The mean gain of XRPIX1-FZ is 3.3 μV/e. and the dispersion of the gain among the pixels is 1 in the standard deviation. We confirmed the energy resolution of 260 eV in FWHM at 8 keV. We achieved the full depletion (250 μm) at 30 V back bias voltage. © 2012 American Institute of Physics.
DOI: 10.1063/1.3696193
-
Nakashima S., Ryu S., Tsuru T., Takeda A., Arai Y., Miyoshi T., Ichimiya R., Ikemoto Y., Imamura T., Ohmoto T., Iwata A.
Physics Procedia 37 1373 - 1380 2012年
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:Physics Procedia
© 2012 Published by Elsevier B.V. We have been developing an active pixel sensor for X-ray astronomy. In this paper, we report on the design and the characterizationof the recently-developed device named XRPIX1-FZ.We applied the high-resistivitySiwafer(∼7 kΩ cm) to the sensor layer for a thick depletion layer. The chemical-mechanical polishing, which we applied to smooth the rough backside of the Si wafer, successfully reduced the dark current. We used the single-pixel readout mode and achievedthe energy resolution of 260eVinFWHMat8keV.Moreover, we developed the 3 × 3pixel readout mode for the evaluation of split events and confirmed the full depletion of 250 μm thick at thereverse-biasvoltageof30 V.
-
Recent Progress of Pixel Detector R&D based on SOI Technology 査読あり
Miyoshi T., Arai Y., Fujita Y., Hara K., Ichimiya R., Ikegami Y., Ikemoto Y., Kasai H., Katsurayama H., Kohriki T., Okihara M., Ono Y., Onuki Y., Shinsho K., Takeda A., Tauchi K., Tsuboyama T., Unno Y.
Physics Procedia 37 1039 - 1045 2012年
記述言語:英語 掲載種別:研究論文(学術雑誌) 出版者・発行元:Physics Procedia
© 2012 Published by Elsevier B.V. We are developing truly monolithic pixel detectors with a 0.2 μm silicon-on-insulator (SOI) CMOS technology, which is intended to be utilized in various research fields, such as high-energy physics, X-ray material analysis, astrophysics and medical sciences. In the development project, KEK has organized several Multi Project Wafer (MPW) runs and the process has been incrementally improved. Czochralski (CZ-) and Float-Zone (FZ-) silicon has been used as a starting material for the detector fabrication. Using FZ-SOI wafers, the detectors worked at full depletion below the breakdown voltage. The up-to-date integration-type pixel detector with 14 μm pixel size has excellent spatial resolution.
-
Ryu S., Tsuru T., Nakashima S., Takeda A., Arai Y., Miyoshi T., Ichimiya R., Ikemoto Y., Matsumoto H., Imamura T., Ohmoto T., Iwata A.
IEEE Transactions on Nuclear Science 58 ( 5 PART 2 ) 2528 - 2536 2011年10月
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:IEEE Transactions on Nuclear Science
We have been developing a monolithic active pixel sensor with the 0.2 μm Silicon-On-Insulator (SOI) CMOS technology, called SOIPIX, for the wide-band X-ray imaging spectroscopy on future astronomical satellites. SOIPIX includes a thin CMOS-readout-array layer and a thick high-resistivity Si-sensor layer stacked vertically on a single chip. This arrangement allows for fast and intelligent readout circuitries on-chip, providing advantages over the charge-coupled device (CCD). We have designed and built a new SOIPIX prototype XRPIX1 for X-ray detection. XRPIX1 implements a correlated double sampling (CDS) readout circuit in each pixel to suppress the reset noise. We obtained an energy resolution of full width at half maximum of 1.2 keV (5.4%) at 22 keV with a chip having a 147 μm sensor depletion at a back bias of 100 V cooled to-50°C. Moreover, XRPIX1 offers intra-pixel hit trigger (timing) and two-dimensional hit-pattern (position) outputs. We also confirmed the trigger capability by irradiating a single pixel with laser light. © 2011 IEEE.
-
Development of SOI pixel process technology 査読あり
Arai Y., Miyoshi T., Unno Y., Tsuboyama T., Terada S., Ikegami Y., Ichimiya R., Kohriki T., Tauchi K., Ikemoto Y., Fujita Y., Uchida T., Hara K., Miyake H., Kochiyama M., Sega T., Hanagaki K., Hirose M., Uchida J., Onuki Y., Horii Y., Yamamoto H., Tsuru T., Matsumoto H., Ryu S., Takashima R., Takeda A., Ikeda H., Kobayashi D., Wada T., Nagata H., Hatsui T., Kudo T., Taketani A., Kameshima T., Hirono T., Yabashi M., Furukawa Y., Battaglia M., Denes P., Vu C., Contarato D., Giubilato P., Kim T., Ohno M., Fukuda K., Kurachi I., Okihara M., Kuriyama N., Motoyoshi M.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 636 ( 1 SUPPL. ) 2011年4月
記述言語:英語 掲載種別:研究論文(学術雑誌) 出版者・発行元:Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
A silicon-on-insulator (SOI) process for pixelated radiation detectors is developed. It is based on a 0.2 μm CMOS fully depleted (FD-)SOI technology. The SOI wafer is composed of a thick, high-resistivity substrate for the sensing part and a thin Si layer for CMOS circuits. Two types of pixel detectors, one integration-type and the other counting-type, are developed and tested. We confirmed good sensitivity for light, charged particles and X-rays for these detectors. For further improvement on the performance of the pixel detector, we have introduced a new process technique called buried p-well (BPW) to suppress back gate effect. We are also developing vertical (3D) integration technology to achieve much higher density. © 2010 Elsevier B.V.
-
Design and development of trigger-driven readout with X-ray SOI pixel sensor
Ryu S.G., Takeda A., Nakashima S., Tsuru T.G., Ikemoto Y., Arai Y., Imamura T., Ohmoto T., Iwata A.
IEEE Nuclear Science Symposium Conference Record 1197 - 1200 2011年
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:IEEE Nuclear Science Symposium Conference Record
We have been developing a monolithic active pixel sensor with the Silicon-On-Insulator (SOI) CMOS technology, called SOIPIX, for future X-ray astronomical satellite missions. The goal of SOIPIX is to replace the X-ray CCD, which is the standard detector in the field, by offering superior time resolution (∼10 μs) and wider bandpass (0.5 keV - 40 keV) in addition to having comparable performances in imaging spectroscopy. In the previous work, we built a SOIPIX prototype, XRPIX1, and confirmed the basic X-ray performance of imaging spectroscopy in a mode reading out the whole area (all pixels). The next step is to realize a high-speed and intelligent readout for X-ray detection. XRPIX1 contains trigger circuit in each pixel to detect an X-ray photon and is capable of direct access to the local pixels to read out the signal amplitude. We report on the design and development of a trigger-driven readout system with XRPIX1. We present the first resolved X-ray spectra of Cu+Mo and Am-241 obtained in the trigger-driven mode. © 2011 IEEE.
-
Onuki Y., Katsurayama H., Ono Y., Yamamoto H., Arai Y., Fujita Y., Ichimiya R., Ikegami Y., Ikemoto Y., Kohriki T., Miyoshi T., Tauchi K., Terada S., Tsuboyama T., Unno Y., Uchida T., Hara K., Shinsho K., Takeda A., Hanagaki K., Tsuru T., Ryu S., Nakashima S., Matsumoto H., Takashima R., Ikeda H., Kobayashi D., Wada T., Hatsui T., Kudo T., Kobayashi K., Kirihara Y., Ono S., Omodani M., Kameshima T., Nagatomo Y., Kasai H., Kuriyama N., Miura N., Okihara M.
Proceedings of Science 137 2011年
記述言語:日本語 掲載種別:研究論文(学術雑誌) 出版者・発行元:Proceedings of Science
© Copyright owned by the author(s). The novel particle and radiation detector using a Silicon On Insulator (SOI) technology has been developing by the SOI collaboration since 2005. The SOI technology can be applied to realize an ideal monolithic detector which consists of electrical insulator sandwiched low resistivity thin wafer for electronics and high resistivity thick wafer for sensor without bump bonding. The multilateral developments for both fundamental properties and dedicated application are progressing simultaneously. The one of the most important break through we had achieved is a buried p-well (BPW) technology. This technology help to lead recent various applications for specific scientific interest such as X-ray diffraction analysis, X-ray astronomy and high energy particle detector. We report recent studies of process based improvements, radiation tolerance and high energy particle tracking.